Compact microwave powerbar devices are fabricated using the 4-inch GaN process based on 500 nm gate length technology.
The power transistors are practically dispersion-free owing to the optimized epitaxial layer design, channel passivation, integrated source-connected field plates, and novel sputtered gate technology.
The power devices are engineered for high linearity and memory-effect reduction. Due to thermally and electrically optimized packaging the compact powerbars deliver:
- output power up to 110 W CW at f = 2 GHz.
- Pout = 85 W and 60% PAE at 2 GHz and 40 V operation voltage for standard design of the power transistor.
