The extraordinary material properties of gallium nitride heterostructures allow for high-speed field effect devices with simultaneous high-charge carrier concentration and high breakdown voltage. These properties are required for very competitive microwave power devices such as discrete power transistors and monolithically integrated microwave ICs (MMIC).
At FBH two different GaN microwave process versions are available and reliably deliver L- to C-band discrete devices as well as X-band MMICs for different applications. For example, X-band GaN MMICs are implemented in our digital power amplifiers, and discrete GaN power devices are marketed by our spin-off company Berlin Microwave Technologies AG (BeMiTec). Discrete microwave power devices also reliably operate in oscillators and power amplifiers for plasma generation. Both process versions are based on our in-house 4-inch GaN-on-SiC process line and rely on similar process modules. They only differ in terms of epitaxial design and gate geometry.
A third process version heading for Ka-band MMICs is currently being developed in the frame of the European project GaNSAT.