Facts & Figures


Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik (FBH)
im Forschungsverbund Berlin e.V.
Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany
Phone +49 30 63922600
Fax +49 30 63922602
Email fbh(at)fbh-berlin.de
Web www.fbh-berlin.de

Director of the Institute

Prof. Dr. Günther Tränkle,
Ext. -2601, guenther.traenkle(at)fbh-berlin.de


1992,member of the Leibniz Association


315 (including 150 scientists, 25 student assistants)

Budget (2019)

  • EUR 17.5 million basic funding: State of Berlin & Federal Government
  • EUR 22.9 million project revenues incl. 5 million Euros income from industrial contracts (industrial projects - EUR 2.5 million on expenditure basis)

Research Topics & Competencies

  • Center of competence for III-V semiconductors – one of the most capable and major businesses in this field in Europe
  • Applied research and development of microwave and optoelectronic devices:


  • high-power diode lasers: broad area & bars
  • high-brightness & narrowband diode lasers
  • hybrid laser modules (cw & pulsed): from NIR to UV spectral range, e.g. for biophotonics, laser sensors, laser metrology, quantum sensors…
  • nitride laser diodes for the blue & UV spectral range
  • short-wave UV LEDs, e.g. for sensors, disinfection, medical & production technology, …

Integrated Quantum Technology

  • electro-optical components & hybrid micro-integrated modules
  • integrated quantum sensors based on atomic gases
  • nanostructured diamond systems & materials

III-V Electronics

  • GaN microwave transistors & MMICs
  • advanced power amplifier concepts for the wireless infrastructure
  • integrated circuits with InP HBTs for the 100…500 GHz frequency range (THz electronics)
  • fast drivers for laser diodes
  • compact sources for microwave plasmas
  • GaN power electronics

III-V Technology

  • epitaxy (MOVPE) of GaAs- & GaN-based layer structures for devices
  • (Al)GaN HVPE for bulk crystal growth
  • in-situ control techniques for MOVPE & HVPE
  • complete process line 2" - 4" for GaAs, InP, SiC & GaN devices, including laser micro processing
  • InP HBT technology for mm-wave & THz applications, hetero-integrated SiGe-BiCMOS/InP-HBT foundry with IHP
  • mounting & assembly


Prototype Engineering

functionally-efficient models & prototypes for system applications

Science Management

  • technology transfer & marketing
  • education & securing skilled personnel


BeamXpert GmbH, BEAPLAS GmbH, BeMiTec AG, Brilliance Fab Berlin GmbH, eagleyard Photonics GmbH, Jenoptik Diode Lab GmbH, TESAG (seit 1/2009 Jenoptik), UVphotonics NT GmbH

Partner of

  • Technische Universität Berlin
  • Humboldt-Universität zu Berlin
  • Goethe-Universität Frankfurt am Main
  • Universitäy of Duisburg-Essen
  • Brandenburg University of Technology Cottbus-Senftenberg
  • Research Fab Microelectronics Germany (FMD)
  • Zwanzig20 consortium „Advanced UV for Life“ (coordinated by FBH)
  • iCampµs
  • Photonics Cluster Berlin Brandenburg
  • ...