Contact

Ferdinand-Braun-Institut gGmbH, Leibniz-Institut fuer Hoechstfrequenztechnik (FBH)
Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany
Phone +49 30 63922600
Fax +49 30 63922602
Email fbh(at)fbh-berlin.de
Web www.fbh-berlin.de

Institute Management

Prof. Dr. Günther Tränkle (Scientific Director)
Ext. -2601, guenther.traenkle(at)fbh-berlin.de
Christian Köhler-Ma (Administrative Director)

Founded

1992,member of the Leibniz Association

Staff

350 (including 150 scientists, 30 student assistants)

Budget (2019)

• EUR 17.5 million basic funding: State of Berlin & Federal Government
• EUR 22.9 million project revenues incl. 5 million Euros income from industrial contracts (industrial projects - EUR 2.5 million on expenditure basis)

Research Topics & Competencies

• Center of competence for III-V semiconductors – one of the most capable and major businesses in this field in Europe
• Applied research and development of microwave and optoelectronic devices:

Photonics

• high-power diode lasers: broad area & bars
• high-brightness & narrowband diode lasers
• hybrid laser modules (cw & pulsed): from NIR to UV spectral range, e.g. for biophotonics, laser sensors, laser metrology, quantum sensors…
• nitride laser diodes for the blue & UV spectral range
• short-wave UV LEDs, e.g. for sensors, disinfection, medical & production technology, …

Integrated Quantum Technology

• electro-optical components & hybrid micro-integrated modules
• integrated quantum sensors based on atomic gases
• nanostructured diamond systems & materials

III-V Electronics

• GaN microwave transistors & MMICs
• advanced power amplifier concepts for the wireless infrastructure
• integrated circuits with InP HBTs for the 100…500 GHz frequency range (THz electronics)
• fast drivers for laser diodes
• compact sources for microwave plasmas
• GaN power electronics

III-V Technology

• epitaxy (MOVPE) of GaAs- & GaN-based layer structures for devices
• (Al)GaN HVPE for bulk crystal growth
• in-situ control techniques for MOVPE & HVPE
• complete process line 2" - 4" for GaAs, InP, SiC & GaN devices, including laser micro processing
• InP HBT technology for mm-wave & THz applications, hetero-integrated SiGe-BiCMOS/InP-HBT foundry with IHP
• mounting & assembly

Outreach

Prototype Engineering

functionally-efficient models & prototypes for system applications

Science Management

• technology transfer & marketing
• education & securing skilled personnel

Spin-offs

BeamXpert GmbH, BEAPLAS GmbH, BeMiTec AG, Brilliance Fab Berlin GmbH, eagleyard Photonics GmbH (now Toptica eagleyard), Jenoptik Diode Lab GmbH & TESAG (both now: Jenoptik Optical Systems GmbH), UVphotonics NT GmbH

Partner of

• Technische Universität Berlin
• Humboldt-Universität zu Berlin
• Goethe-Universität Frankfurt am Main
• Universitäy of Duisburg-Essen
• Brandenburg University of Technology Cottbus-Senftenberg

• Research Fab Microelectronics Germany (FMD)
• Zwanzig20 consortium „Advanced UV for Life“ (coordinated by FBH)
• iCampµs
• Photonics Cluster Berlin Brandenburg
• ...