GaN Power Electronic Devices Lab

GaN-based high-voltage power switching transistors enable efficient power converters with increased power density. High converter switching frequencies can be realized with lateral GaN-based HFETs due the low area-specific on-state resistance for a given blocking strength and the low gate charge required for switching.

In the GaN Power Electronic Devices Lab we develop

• normally-off lateral GaN switching transistors up to 650 V
• monolithically integrated half bridges
• vertical GaN switching transistors up to 1200 V
• lateral AlN transistors up to 1200 V
• hybrid integrated fast switching power cores