GaN Power Electronic Devices Lab

GaN-based high-voltage power switching transistors enable efficient power converters with increased power density. High converter switching frequencies can be realized with lateral GaN-based HFETs due the low area-specific on-state resistance for a given blocking strength and the low gate charge required for switching.

In the GaN Power Electronic Devices Lab we develop

Normally-off 60 mOhm / 600 V GaN transistor chip (4.4 x 2.3 mm2)