GaN Microwave Devices Lab

The excellent properties of AlGaN/GaN heterostructures enable high-speed field-effect devices with simultaneously high current-carrying capacity and breakdown voltage. These properties are the prerequisite for novel microwave power devices such as discrete power transistors and MMICs. We offer two process versions:

We are currently developing a third process version for Ka-band MMICs as part of the European project GaNSAT.

Flip chip mounted GaN power transistor