The excellent properties of AlGaN/GaN heterostructures enable high-speed field-effect devices with simultaneously high current-carrying capacity and breakdown voltage. These properties are the prerequisite for novel microwave power devices such as discrete power transistors and MMICs. We offer two process versions:
- Discrete GaN power transistors for applications in the L- to C-band - these are used in our microwave plasma sources, among others.
- GaN MMICs for the X-band - these are used in our digital power amplifiers, among other things.
We are currently developing a third process version for Ka-band MMICs as part of the European project GaNSAT.