A. Knauer, P. Krispin, A. Dadgar and M. Weyers
"Avoidance of surface-related defects in MOVPE-grown InGaP layers"
Journal of Crystal Growth 287 (2006) 633-636.

M. Zorn, J.-T. Zettler, A. Knauer and M. Weyers
"In situ determination and control of AlGaInP composition during MOVPE growth"
Journal of Crystal Growth 287 (2006) 637-641.

H. Wenzel, R. Güther, A.M. Shams-Zadeh-Amiri, and P. Bienstman
"A Comparative Study of Higher Order Bragg Gratings: Coupled-Mode Theory Versus Mode Expansion Modeling"
IEEE Journal of Quantum Electronics, vol. 42, no. 1, pp. 64-70, January 2006.

G.G. Tarasov, Z.Ya. Zhuchenko, M.P. Lisitsa, Yu.I. Mazur, Zh.M. Wang, G.J. Salamo, T. Warming, D. Bimberg, H. Kissel
"Optical Detection of Asymmetric Quantum-Dot Molecules in Double-Layer InAs/GaAs Structures"
Semiconductors, 2006, Vol. 40, No. 1, pp. 79-83.

F. Bugge, U. Zeimer, H. Wenzel, R. Staske, B. Sumpf, G. Erbert, M. Weyers and G. Tränkle
"Laser Diodes with highly strained InGaAs MQWs and very narrow far fields"
phys. stat. sol. (c)3, 3 (2006) 423-426.

A. Klehr, F. Bugge, G. Erbert, J. Fricke, A. Knauer, P. Ressel, H. Wenzel, G. Tränkle
"High power broad area 808 nm DFB lasers for pumping solid state lasers"
Proceedings SPIE, vol. 6133, "Novel In-Plane Semiconductor Lasers V", 96-105 (2006).

H. Wenzel, J. Fricke, A. Klehr, A. Knauer, G. Erbert
"High-Power 980-nm DFB RW Lasers With a Narrow Vertical Far Field"
IEEE Photonics Technology Lett., Vol. 18, No. 6, 737-739 (2006).

M. Maiwald, S. Schwertfeger, R. Güther, B. Sumpf, K. Paschke, C. Dzionk, G. Erbert, and G. Tränkle
"600 mW optical output power at 488 nm by use of a high-power hybrid laser diode system and a periodically poled MgO:LiNbO₃"
Optics Letters, Vol. 31, No. 6, March 15, pp. 802-804, 2006.

A.M. Shams-Zadeh-Amiri, W. Li, H. Wenzel, X. Li
"Amplified-Spontaneous-Emission Spectrum of the Radiation Field in Surface-Emitting DFB Lasers"
Journal of Lightwave Technology, vol. 24, no. 4, pp. 1824-1833, April 2006.

F. Dittmar, B. Sumpf, J. Fricke, G. Erbert, and G. Tränkle
"High-power 808-nm tapered diode lasers with nearly diffraction-limited beam quality of M² = 1.9 at P = 4.4 W"
IEEE Phot. Techn. Lett. 18, pp. 601-603 (2006).

S. Schwertfeger, J. Wiedmann, B. Sumpf, A. Klehr, F. Dittmar, A. Knauer, G. Erbert and G. Tränkle
"7.4 W continuous-wave output power of master oscillator power amplifier system at 1083 nm"
Electronics Letters, Vol. 42, No. 6, 346-347 (2006).

B. Sumpf, M. Zorn, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, G. Tränkle
"High-efficient 650 nm laser bars with an output power of about 10 W and a wall-plug efficiency of 30%"
Proceedings SPIE, vol. 6133, "Novel In-Plane Semiconductor Lasers V", 78-85 (2006).

H. Zscheile, F.J. Schmückle, and W. Heinrich
"Finite Difference Formulation Accounting for Field Singularities"
IEEE Trans. MTT, Vol. 54, No. 5, pp. 2000-2010, May 2006.

K. Paschke, J. Behrendt, M. Maiwald, J. Fricke, H. Wenzel, and G. Erbert
"High power single mode 980 nm DBR tapered diode lasers with integrated sixth order surface gratings based on simplified fabrication process"
Proceedings SPIE, vol. 6184, "Semiconductor Lasers and Laser Dynamics II", 1-7 (2006).

M. Rudolph
"Introduction to Modeling HBTs"
Boston, London: Artech House, 2006, ISBN 1-58053-144-X.

M. Rudolph, R. Behtash, K. Hirche, J. Würfl, W. Heinrich, G. Tränkle
"A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier"
IEEE MTT-S Int. Microwave Symp. Dig., 2006, 1899 - 1902.

H. Klockenhoff, R. Behtash, J. Würfl, W. Heinrich, and G. Tränkle
"A Compact 16 Watt X-Band GaN-MMIC Power Amplifier"
IEEE MTT-S Int. Microwave Symp. Dig., 2006, 1846 - 1849.

P.K. Talukder, M. Neuner, Ch. Meliani, F.J. Schmückle, and W. Heinrich
"A 24 GHz Active Antenna in Flip-Chip Technology with Integrated Frontend"
IEEE MTT-S Int. Microwave Symp. Dig., 2006, 1776 - 1779.

Ch. Meliani, F. Lenk and W. Heinrich
"24 GHz low power VCOs and analog frequency dividers"
IEEE MTT-S Int. Microwave Symp. Dig., 2006, 1801 - 1804.

M. Rudolph, F. Lenk, O. Llopis, W. Heinrich
"On the Simulation of Low-Frequency Noise Upconversion in InGaP/GaAs HBTs"
IEEE Trans. Microwave Theory Tech., Vol. 54, no. 7, July 2006, pp. 2954-2961.

R. Güther
"Stigmatic focussing of astigmatic beams emitted by tapered laser diodes"
DGaO-Proceedings, P5, 2006.

M. Zorn, F. Bugge, T. Schenk, U. Zeimer, M. Weyers and J.-T. Zettler
"Feedback controlled growth of strain-balanced InGaAs multiple quantum wells in metal-organic vapour phase epitaxy using an in situ curvature sensor"
Semiconductor Science and Technology 21(9) (2006) p. L45-L48.

E. Richter, Ch. Hennig, U. Zeimer, M. Weyers, G. Tränkle, P. Reiche, S. Ganschow, R. Uecker, and K. Peters
"Freestanding two inch c-plane GaN layers grown on (100) γ-lithium aluminium oxide by hydride vapour phase epitaxy"
phys. stat. sol. (c)3, 6 (2006) 1439-1443.

Ch. Hennig, E. Richter, U. Zeimer, M. Weyers, and G. Tränkle
"Bowing of thick GaN layers grown by HVPE using ELOG"
phys. stat. sol. (c)3, 6 (2006) 1466-1470.

G. Sonia, E. Richter, R. Lossy, M. Mai, J. Schmidt, M. Weyers, G. Tränkle, A. Denker, <nobr>J. Opitz-Coutureau,</nobr> G. Pensl, I. Brauer, and H.P. Strunk
"High and low energy proton irradiation effects on AlGaN/GaN HFETs"
phys. stat. sol. (c)3, 6 (2006) 2338-2341.

E. Richter, Ch. Hennig, U. Zeimer, L. Wang, M. Weyers, and G. Tränkle
"N-type doping of HVPE-grown GaN using dichlorosilane"
phys. stat. sol. (a)203, 7 (2006) 1658-1662.

L. Wang, U. Zeimer, E. Richter, Ch. Hennig, M. Herms, and M. Weyers
"Characterization of free standing GaN grown by HVPE on a LiAlO₂ substrate"
phys. stat. sol. (a)203, 7 (2006) 1663-1666.

B. Kunert, A. Klehr, S. Reinhard, K. Volz, W. Stolz
"Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy"
Electronics Letters, Vol. 42, No. 10, 601-603 (2006).

H. Wenzel
"Accurate modeling of InGaN quantum wells"
Proceedings 6th International Conference on Numerical Simulation of Optoelectronic Devices, IEEE, p. 7-8 (2006).

F. Saas, V. Talalaev, U. Griebner, J.W. Tomm, M. Zorn, A. Knigge, M. Weyers
"Optically pumped semiconductor disk laser with graded and step indices"
Appl. Phys. Lett. 89, 151120 (2006).

F. Saas, G. Steinmeyer, U. Griebner, M. Zorn, M. Weyers
"Exciton resonance tuning for the generation of subpicosecond pulses from a mode-locked semiconductor disk laser"
Appl. Phys. Lett. 89, 141107 (2006).

B. Sumpf, M. Zorn, R. Staske, J. Fricke, P. Ressel, A. Ginolas, K. Paschke, G. Erbert, M. Weyers, G. Tränkle
"3 W-broad area lasers and 12 W-bars with conversion efficiencies up to 40% at 650 nm"
2006 IEEE 20th International Semiconductor Laser Conference, September 2006, Hawaii, USA, TuC3, IEEE Catalog Number: 06CH37738C, ISBN 0-7803-9560-3, Library of Congress: 2005934158.

F. Dittmar, A. Klehr, B. Sumpf, A. Knauer, J. Fricke, G. Erbert, G. Tränkle
"9 W output power from a 808 nm tapered diode laser in pulsed mode operation with nearly diffraction-limited beam quality"
2006 IEEE 20th International Semiconductor Laser Conference, September 2006, Hawaii, USA, TuC2, IEEE Catalog Number: 06CH37738C, ISBN 0-7803-9560-3, Library of Congress: 2005934158.

B. Sumpf, M. Zorn, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, G. Tränkle
"5-W Reliable Operation Over 2000 h of 5-mm-Wide 650-nm AlGaInP-GaInP-AlGaAs Laser Bars With Asymmetric Cladding Layers"
Photonics Technology Letters vol.18 no.18 (2006) 1955-1957.

O. Krüger, G. Schöne, T. Wernicke, R. Lossy, A. Liero, F. Schnieder, J. Würfl, and G. Tränkle
"Laser-Assisted Processing of VIAs for AlGaN/GaN HEMTs on SiC Substrates"
IEEE Electron Device Letters, vol. 27, no. 6, pp. 425-427, June 2006.

R. Lossy, A. Liero, O. Krüger, J. Würfl, and G. Tränkle
"Gallium nitride powerbar transistors with via holes fabricated by laser ablation"
phys. stat. sol. (c) 3, No. 3, 482-485 (2006).

T.Q. Tien, F. Weik, J.W. Tomm, B. Sumpf, M. Zorn, U. Zeimer, G. Erbert
"Thermal properties and degradation behavior of red-emitting high-power diode lasers"
Appl. Phys. Lett. 89 (2006) 181112.

M. Maiwald, G. Erbert, A. Klehr, H.-D. Kronfeldt, H. Schmidt, B. Sumpf, G. Tränkle
"Rapid shifted excitation Raman difference spectroscopy with a distributed feedback diode laser emitting at 785 nm"
Appl. Phys. B 85, 509-512 (2006).

N. Chaturvedi, U. Zeimer, J. Würfl, G. Tränkle
"Mechanism of ohmic contact formation in AlGaN/GaN high electron mobility transistors"
Semicond. Sci. Technol. 21 (2006) 1-5.

A.P. Bogatov, A.E. Drakin, D.V. Batrak, R. Güther, K. Paschke, H. Wenzel
"Spectral properties of a semiconductor α-DFB laser cavity"
Quantum Electronics 36 (8) 745-750 (2006).

S. Rivier, X. Mateos, J. Liu, V. Petrov, and U. Griebner, M. Zorn, M. Weyers, H. Zhang, J. Wang, and M. Jiang
"Passively mode-locked Yb:LuVO₄ oscillator"
Optics Express, Vol. 14, Issue 24, pp. 11668-11671 (2006).

M.P. Semtsiv, S. Dressler, U. Muller, S. Knigge, M. Ziegler, W.T. Masselink
"Proton-implanted shallow-ridge quantum-cascade laser"
IEEE Journal of Quantum Electronics, vol. 42, no. 5, pp. 490- 493, May 2006.

A. Rumiantsev, R. Doerner, P. Sakalas
"Verification of Wafer-Level Calibration Accuracy at Cryogenic Temperatures"
68th ARFTG Conference Digest, Broomfield, Colorado, 2006.

A. Rumiantsev, R. Doerner, S. Thies
"Calibration Standards Verification Procedure Using the Calibration Comparison Technique"
36th European Microwave Conference Dig., 2006, pp. 489 - 491.

H. Wenzel
"Accurate modelling of InGaN quantum wells"
Optical and Quantum Electronics, vol. 38, pp. 953-961, 2006.

C. Meliani, M. Huber, G. Boeck, and W. Heinrich
"A GaAs HBT low power 24 GHz downconverter with on-chip local-oscillator"
2006 European Microwave Integrated Circuits Conference (EuMIC) Digest, pp. 141-144, Sept. 2006.

T.N. Le, M.R. Hofmann, A. Klehr, G. Erbert
"Hybrid and passive mode-locking of a two-section laser diode in a Fourier transform external cavity"
IEE Proc.-Optoelectron., Vol. 153, No. 6, pp. 312-315, December 2006.