L. Hofmann, A. Knauer, I. Rechenberg, M. Weyers, W. Stolz
"Patterned Growth (AlGa)As Using Metalorganic Vapor-Phase Epitaxy"
J. of Crystal Growth 206, pp. 255 - 262, 1999.

L. Hofmann, A. Klehr, A. Knauer, V.B. Smirnitskii, W. Stolz
"DBR Lasers Emitting at 1060 nm with First-Order Grating in (InGa)P Waveguide Layer"
Electronics Letters, Vol. 35, No. 11, pp. 902 - 903, 1999.

A. Knauer, G. Erbert, H. Wenzel, A. Bhattacharya, F. Bugge, J. Maege, W. Pittroff, J. Sebastian
"7 W CW Power from Tensile-Strained GaAs_yP_1-yAlGaAs (λ = 735 nm) QW Diode Lasers"
Electronics Letters, Vol. 35, No. 8, pp 638 - 639, 1999.

P. Krispin, M. Asghar, A. Knauer
"Deep Electronic States Near the Surface of (In,Ga)P-Layers Grown by MOVPE on GaAs "
Physica B, 273-274, pp. 815-818, 1999.

A. Oster, F. Bugge, G. Erbert, H. Wenzel
"Gain Spectra Measurement of Strained InGaAsP / GaAsP / AlGaAs Single and Double Quantum Well Laser Structures for Wavelength Near 800 nm"
Inst. Phys. Conf. Ser. No. 162: Chapt. 4, pp 167 - 172, 1999.

A. Oster, F. Bugge, G. Erbert, H. Wenzel
"Gain Spectra Measurement of Strained and Strain-Compensated InGaAsP/AlGaAs Laser Structures for λ = 800 nm"
IEEE Journal of Selected Topics in Quantum Electronics, Vol. 5, No. 3, pp. 631 - 636, 1999.

M. Rebien, W. Henrion, U. Müller, S. Gramlich
"Exciton Absorption in b-FeSi₂ Epitaxial Films"
Applied Physics Letters, Vol. 74, No. 7, pp. 970 - 972, 1999.

E. Richter, F. Brunner, S. Gramlich, S. Hähle, M. Mai, U. Zeimer, M. Weyers
"Assessment of Layer Structures for GaInP/GaAs-Heterojunction Bipolar Transistors"
Materials Science and Engineering B 66, pp. 162 - 173 (1999).

U. Zeimer, T. Baumbach, J. Grenzer, D. Lübbert, A. Mazuelas, U. Pietsch, G. Erbert
"In situ Characterization of Strain Distribution in Broad-Area High-Power Lasers under Operation by High-Resolution X-ray Diffraction and Topography using Synchrotron Radiation"
J. Phys. D: Appl. Phys. 32 (1999) A 123-A127.

M. Zorn, P. Kurpas, A.I. Shkrebtii, B. Junno, A. Bhattacharya, K. Knorr, M. Weyers, L. Samuelson, J.-T. Zettler, W. Richter
"Correlation of InGaP(001) Surface Structure during Growth and Bulk Ordering"
Phys. Rev. B, Vol. 60, No. 11, pp. 8185 - 8190, 1999.

C.N. Rheinfelder, K.M. Strohm, L. Metzger, J.-F. Luy, and W. Heinrich
"A SiGe-MMIC Oscillator at 47 GHz"
1999 Int. Microwave Symp. Digest, Vol. 1, pp. 5-8.

D. Ferling, W. Heinrich, W. Kuebart, and G. Luz
"Hybrid integrated fibre-amplifier-antenna module for radio applications at 60 GHz"
1999 Int. Microwave Symp. Digest, Vol. 2, pp. 457-460.

A. Jentzsch and W. Heinrich
"Optimization of flip-chip interconnects for millimeter-wave frequencies"
1999 Int. Microwave Symp. Digest, Vol. 2, pp. 637-640.

N.-H. Huynh and W. Heinrich
"FDTD accuracy improvement by incorporation of 3D edge singularities"
1999 Int. Microwave Symp. Digest, Vol. 4, pp. 1573-1576.

M. Kunze, W. Heinrich
"Efficient FD formulation for lossy waveguide analysis based on quasistatic field characteristics"
IEEE Microwave and Guided Wave Letters, Vol. 9, No. 12, pp. 499-501, Dec. 1999.

G. Hebermehl, R. Schlundt, H. Zscheile and W. Heinrich
"Improved Numerical Methods for the Simulation of Microwave Circuits"
Surveys on Mathematics for Industry, vol. 9, No. 2, pp. 117-129 (1999).

P. Heymann, M. Rudolph, H. Prinzler, R. Doerner, L. Klapproth, G. Böck
"Experimental Evaluation of Microwave Field-Effect-Transistor Noise Models"
IEEE Transactions on Microwave Theory and Techniques, Vol. 47, No. 2, pp. 156 -163, 1999.

M. Rudolph, R. Doerner, P. Heymann
"Direct Extraction of HBT Equivalent-Circuit Elements"
IEEE Transactions on Microwave Theory and Techniques, Vol. 47, No. 1, pp. 82 - 84, January 1999.

M. Rudolph, R,. Doerner, L. Klapproth, P. Heymann
"An HBT Noise Model Valid Up to Transit Frequency"
IEEE Electron Device Letters, Vol. 20, No. 1, pp. 24 - 26, January 1999.

M. Rudolph, F. Lenk, R. Doerner, P. Heymann
"Influence of 2 GHz Harmonic Load-Pull on HBT and MESFET Output Power and Efficiency"
IEEE MTT-S Int. Microwave Symp. Tech. Dig., 1999, pp. 741 - 744.

G. Beister, G. Erbert, A. Knauer, J. Maege, P. Ressel, J. Sebastian, R. Staske, H. Wenzel
"High-Power and High Temperature Long-Term Stability of Al-free 950 nm Laser Structures on GaAs"
Electronics Letters, Vol. 35, No. 19, pp. 1641 - 1642, 1999.

G. Erbert, F. Bugge, A. Knauer, J. Sebastian, A. Thies, H. Wenzel, M. Weyers, G. Tränkle
"High-Power Tensile-Strained GaAsP-AlGaAs Quantum-Well Lasers Emitting between 715 and 790 nm"
IEEE Journal of Selected Topics in Quantum Electronics, Vol. 5, No. 3, pp. 780 - 784.

R. Güther
"Wavelength-Angle-Selectivity of an Angled Grating in a Fabry-Perot-Resonator Alpha Laser"
J. Opt. A: Pure Appl. Opt. 1, pp. 417 - 423, 1999.

H. Wenzel, G. Erbert, P. Enders
"Improved Theory of the Refractive-Index Change in Quantum-Well Lasers"
IEEE Journal of Selected Topics in Quantum Electronics, Vol.5, No. 3, pp. 637 - 642, 1999.

S. Brehme, F. Fenske, W. Fuhs, E. Nebauer, M. Poschenrieder, B. Selle, I. Sieber
"Free-Carrier Plasma Resonance Effects and Electron Transport in Reactively Sputtered Degenerate ZnO:Al Films"
Thin Solid Films 342, pp. 167 - 173 (1999).

F. Fenske, W. Fuhs, E. Nebauer, A. Schöpke, B. Selle, I. Sieber "Transparent Conductive Zn0:Al Films by Reactive Co-Sputtering from Separate Metallic Zn and Al Targets" Thin Solid Films 343 - 344 (1999) 130 - 133.

J. Hilsenbeck, W. Rieger, E. Nebauer, W. John, G. Tränkle, J. Würfl, A. Ramakrishan, H. Obloh
"AlGaN/GaN HFETs with New Ohmic and Schottky Contacts for Thermal Stability up to 400°C"
phys. stat. sol. (a) 176, 183 - 185, 1999.

O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, J. Hilsenbeck
"Two-dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarization Charges in N- and Ga-face AlGaN/GaN Heterostructures"
Journal of Applied Physics, Vol. 85, No. 6, pp. 3222 - 3233, 1999.

R. Dimitrov, A. Mitchell, L. Wittmer, O. Ambacher, M. Stutzmann, J. Hilsenbeck, W. Rieger
"Comparison of N-face and Ga-face AlGaN/GaN-based High Electron Mobility Transistors"
Jpn. J. Appl. Phys., Vol. 38, pp. 4962 - 4968, 1999.

J. Würfl, V. Abrosimova, J. Hilsenbeck, E. Nebauer, W. Rieger, G. Tränkle
"Reliability considerations of III-nitride microelectronic devices"
Microel. Reliab., 39, pp. 1737-1757, 1999.

V.I. Zubkov, M.A. Melnik, A.V. Solomonov, A.N. Pikhtin, and F. Bugge
"Determination of the valence-band offset and its temperature dependence in isotypic heterojunctions p-Al_xGa_1-xAs/p-Al_yGa_1-yAs from C-V measurements"
Semiconductors 33(1999)8 S. 858-861.

J. Platen, B. Selle, I. Sieber, U. Zeimer, W. Fuhs
"Homoepitaxial growth of silicon at low temperature (325°C)"
MRS Proc. V. 570 (1999) 91 - 96.

G. Erbert, F. Bugge, A. Knauer, J. Maege, A. Oster, J. Sebastian, R. Staske, A. Thies, H. Wenzel, M. Weyers, and G. Tränkle
"Diode lasers with Al-free quantum wells embedded in LOC AlGaAs waveguides between 715 nm and 840 nm"
Proceedings SPIE, vol. 3628, pp. 19-28 (1999).