G. Hebermehl, R. Schlundt, H. Zscheile, and W. Heinrich
"Eigen mode solver for microwave transmission lines"
COMPEL (Int. Journal for computation and mathematics in electrical and electronic engineering) 16 (1997) 108.

H.-M. Heiliger, M. Nagel, H.G. Roskos, H. Kurz, F. Schnieder, W. Heinrich, R. Hey, and K. Ploog
"Low-dispersion thin-film microstrip lines with cyclotene as dielectric medium"
Appl. Phys. Lett. 70 (1997) 2233.

P. Heymann, R. Doerner, F. Bugge, T. Langer, and H. Prinzler
"A physics -based model of hyperabrupt varactors for nonlinear transmission line applications"
Int. J. Microwave Millimeter-Wave CAE 7 (1997) 278.

W. Heinrich
"SiGe MMICs - on the current state-of-the-art"
Proc. of the WRI Int. Symposium on New Directions for the Next Generation of MMIC Devices and Systems Plenum Press, New York (1997) 205.

N.-H. Huynh, W. Heinrich
"FDTD Analysis of Sub-Milimeter Wave CPW with Finite-Width Ground Metallization"
IEEE Microwave and Guided Wave Letters 7 (1997) 414.

C. Rheinfelder, F. Beißwanger, W. Heinrich
"Nonlinear Modelling of SiGe HBTs up to 50 GHz"
IEEE Trans. MTT 45 (1997) 2503.

G. Erbert, G. Beister, F. Bugge, J. Maege, P. Ressel, J. Sebastian, K. Vogel, H. Wenzel, M. Weyers
"Stable operation of InGaAs/InGaP/AlGaAs (λ=1020nm) laser diodes"
Electronics Letters 33 (1997) 778.

G. Beister, J. Maege, G. Erbert, I. Rechenberg, J. Sebastian, M. Weyers, J. Würfl
"Method for observation of facet degradation and stabilization in InGaAs/AlGaAs laser diodes"
23rd Int. Symp. Compound Semiconductors, Inst. Phys. Conf. Ser. No. 155 (1997) 581.

M. Procop, A. Klein, I. Rechenberg, D. Krüger
"AES Depth Profiling of Semiconducting Epitaxial Layers with Thickness in the Nanometer Range Using an Ion Beam Bevelling Technique"
Surface and Interface Analysis 25 (1997) 458.

H. Wenzel, J.-J. Wünsche
"The effective frequency method in the analysis of vertical-cavity surface-emitting lasers"
IEEE J. of Quantum Electronics 33 (1997) 1156.

T. Bergunde, M. Dauelsberg, L. Kadinski, Y. Makarov, V.S. Yuferev, D. Schmitz, G. Strauch, H. Jürgensen
"Process Optimization of MOVPE Growth by Numerical Modelling of Transport Phenomena Including Thermal Radiation"
Proceedings of 2nd Int. Workshop on Modelling, J. of Crystal Growth 180 (1997) 660.

F. Bugge, G. Beister, G. Erbert, S. Gramlich, K. Vogel, U. Zeimer, M. Weyers
"GaInP/AlGaAs/GaAs laser diodes with high output power"
Proceedings of 23th ISCS, Inst. Phys. Conf. Ser. 155 (1997) 573.

N. Darowski, K. Paschke, U. Pietsch, K.H. Wang, A. Forchel, T. Baumbach, U. Zeimer
"Identification of a buried single quantum well within surface structured semiconductors using depth resolved x-ray grazing incidence diffraction"
Rapid Communication in J. Phys. D: Appl. Phys. 30 (1997) L55.

A. Knauer, I. Rechenberg, F. Bugge, S. Gramlich, G. Oelgart, A. Oster, M. Weyers
"Influence of growth temperature and substrate orientation on the layer properties of MOVPE-grown (GaIn)(AsP)/GaAs"
Proceedings of ICMOVPE VIII, J. Cryst. Growth 170 (1997) 281.

P. Kurpas, E. Richter, M. Sato, F. Brunner, D. Gutsche, M. Weyers
"MOVPE growth of GaInP/GaAs hetero-bipolar-transistors using CBr4 as carbon dopant source"
Proceedings of ICMOVPE-8, J. Cryst. Growth 170 (1997) 442.

P. Kurpas, A. Rumberg, M. Weyers, K. Knorr, T. Bergunde, M. Sato, W. Richter
"Growth monitoring by reflectance anisotropy spectroscopy in MOVPE reactors for device fabrication"
Proceedings of ICMOVPE-8, J. Cryst. Growth 170 (1997) 203.

P. Kurpas, A. Oster, M. Weyers, A. Rumberg, K. Knorr, W. Richter
"Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy (RAS)"
Proceedings of 8th Workshop on OMVPE, J. of Electron. Mater. 26 (1997) 1159.

P. Kurpas, M. Sato, A. Knauer, M. Weyers
"On-line growth monitoring of InP-based device structures by reflectance anisotropy spectroscopy"
Proceedings of 8th Work-shop on OMVPE, J. of Electron. Mater. 26 (1997) 1154.

M.A. Melnik, A.N. Pikhtin, A.V. Solomonov, V.I. Zubkov, and F. Bugge
"Determination of valence-band offset of p-AlxGa1-xAs/p-AlyGa1-yAs-heterojunctions from C-V- measurements"
Proceedings of 23th ISCS, Inst. Phys. Conf. Ser. 145 (1997) 977.

G. Oelgart, S. Gramlich, T. Bergunde, E. Richter, M. Weyers
"Assessment of composition ratio in high-purity GaAs using photoluminescence"
Proceedings of 3. EXMATEC, Materials Science and Engineering B44 (1997) 228.

A. Oster, F. Bugge, S. Gramlich, M. Procop, U. Zeimer, and M. Weyers
"Interdiffusion in InGaAs/GaAs and InGaAs/GaAsP quantum wells"
Proceedings of 3. EXMATEC, Materials Science and Engineering B44 (1997) 20.

A. Oster, G. Erbert and H. Wenzel "Gain spectra measurement by a variable stripe length method with current injection"
Electronics Letters 33 (1997) 864.

I. Rechenberg, A. Knauer, F. Bugge, U. Richter, G. Erbert, K. Vogel, A. Klein, U. Zeimer, and M. Weyers
"Crystalline perfection in GaInAsP/GaAs laser structures with GaInP or AlGaAs cladding layers"
Proceedings of 3. EXMATEC, Materials Science & Engineering B44 (1997) 368.

E. Richter, P. Kurpas, M. Sato, M. Trapp, U. Zeimer, S. Hähle, M. Weyers
"Hydrogen in carbon-doped GaAs base layer of GaInP/GaAs heterojunction bipolar transistors"
Proceedings of 3. EXMATEC, Mat. Science and Engineering B44 (1997) 337-340.

D. Rose, U. Pietsch, U. Zeimer
"Characterization of InxGa1-xAs single quantum wells, buried in GaAs(001), by grazing incidence diffraction"
J. Appl. Phys. 81 (1997) 2601.

M. Sato, U. Zeimer, F. Bugge, S. Gramlich and M. Weyers
"Evaluation of strained InGaAs/GaAs quantum wells by atomic force microscopy"
Appl. Phys. Letters 70 (1997) 1.

U. Zeimer, F. Bugge, S. Gramlich, I. Urban, A. Oster, M. Weyers
"High-resolution X-ray diffraction investigation of crystal perfection and relaxation of GaAs/ InGaAs/ GaAs quantum wells depending on MOVPE growth conditions"
Proceedings of 3rd Eur. Symp. On X-ray top. And high resolution diffraction, IL NUOVO CIMENTO 19D (1997) 369-376.

V. Abrosimova, E. Nebauer, P. Ressel, I. Urban, J. Würfl
"Temperature stable Pd-In-Ge/WSiN/Ti/Pt/Au contacts to GaAs"
Proceedings of 23rd International Symposium on Compound Semiconductors ISCS-23"
Inst. Phys. Conf. Ser. 155 (1996) 613.

E. Nebauer, U. Merkel, J. Würfl
"Structure and stability studies on W, WSi, WSiN/GaAs systems by XRD"
Semicond. Sci. Technol. 12 (1997) 1072-1078.

V. Malina, K. Vogel, P. Ressel, W.O. Barnard, A. Knauer
"Comparison of Ti/Pt/Au and Ti/Ru/Au contact systems to p-type InGaP"
Semicond. Sci. and Technol. 12 (1997) 1298.