1996

B. Bader, P. Russer
"Modelling of edges and corners in the alternating transmission line matrix (ATLM) scheme"
IEE Electronics Lett. 32 (1996) 1897.

W. Heinrich, K. Beilenhoff, P. Mezzanotte, L. Roselli
"On the accuracy of the Finite-Difference Method using mesh grading"
IEEE Trans. MTT 44 (1996) 1569.

M. Niederhoff, W. Heinrich, P. Russer
"Three-Dimensional Full-Vector Analysis of Optical Waveguides by Finite-Integration Beam-Propagation Method"
Int. Journal of Numerical Modelling 9 (1996) 249.

C.N. Rheinfelder, F. Beißwanger, J. Gerdes, F.J. Schmückle, K.M. Strohm, J.-F. Luy, W. Heinrich
"A coplanar 38 GHz SiGe-MMIC oscillator,"
IEEE Microwave and Guided-Wave Letters 6 (1996) 398.

F. Schnieder, R. Doerner, W. Heinrich
"High-Impedance coplanar wave-guides with low attenuation"
IEEE Microwave and Guided Wave Letters 6 (1996) 117.

G. Beister, J. Maege, D. Gutsche, G. Erbert, J. Sebastian, K. Vogel, M. Weyers, J. Würfl, O.P. Daga
"Simple Method for Examining Sulphur Passivation of Facets in InGaAs-AlGaAs (λ=980nm) Laser Diodes"
Appl. Phys. Lett. 68 (1996) 2467.

G. Beister, J. Maege, J. Sebastian, G. Erbert, L. Weixelbaum, M. Weyers, J. Würfl, O.P. Daga
"Stability of Sulfur-Passivated Facets of InGaAs-AlGaAs Laser Diodes"
IEEE Photon. Technol. Lett. 8 (1996) 1124.

G. Erbert, F. Bugge, A. Knauer, J. Sebastian, K. Vogel, M. Weyers
"High power diode lasers based on InGaAsP spacer- and waveguide-layers with AlGaAs cladding layers"
Proc. SPIE 2683 (1996) 135.

R. Güther, R. Staske, M. Becker
"Application of a Two-Dimensional Direction Dependent Sub-µm-Offset Sensor"
eds., J. S. Chang, J. H. Lee, C. H. Nam: Optics for Science and New Technology, Proc. SPIE 2778 (1996) 1170.

J. Rehberg, H.-J. Wünsche, U. Bandelow, H. Wenzel
"Spectral properties of a system describing fast pulsating DFB lasers"
ZAMM, 77 (1996) 75.

H. Wenzel, U. Bandelow, H.-J. Wünsche, J. Rehberg
"Mechanisms of fast self pulsations in two-section DFB lasers"
IEEE Journal of Quantum Electronics, 32 (1996) 69.

H. Wenzel, G. Erbert
"Simulation of single-mode high-power lasers"
Proceedings of Physics and Simulation of Optoelectronic Devices IV, Proc. SPIE 2693 (1996) 418.

F. Bugge, G. Erbert, M. Procop, I. Rechenberg, U. Zeimer, M. Weyers
"Effect of growth temperature on performance of AlGaAs/InGaAs/GaAs QW laser diodes"
Journal of Electronic Materials 25 (1996) 309.

F. Bugge, G. Erbert, S. Gramlich, I. Rechenberg, U. Zeimer, M. Weyers,
"Effect of strain and growth temperature on In incorporation and properties of high power laser diodes in MOVPE grown (In,Ga)(As,P)/GaAs"
Proceedings of 22th ISCS, Inst. Phys. Conf. Ser. 145 (1996) 167.

A. Klein, I. Urban, P. Ressel, E. Nebauer, U. Merkel
"Preparation, transmission electron microscopy, and microanalytical investigations of metal-III-V-semiconductor interfaces"
Mater. Charact. 37 (1996) 143.

A. Knauer, F. Bugge, G. Erbert, A. Oster, M. Weyers
"MOVPE growth of (In,Ga)(As,P) for high-power laser diodes"
Proceedings of 22th ISCS, Inst. Phys. Conf. Ser. 145 (1996) 171.

P. Kurpas, E. Richter, D. Gutsche, F. Brunner, M. Weyers
"Carbon doped GaAs grown by MOVPE using CBr4"
Proceedings of 22th ISCS, Inst. Phys. Conf. Ser. No 145 (1996) 177.

A. Oster, A. Knauer, D. Gutsche, M. Weyers
"Evidence of ordering effects in (InGa)(AsP)-layers"
Proceedings of 10th ICTMC, J. Cryst. Res. & Technol. 31 (1996) 931.

I. Rechenberg, A. Oster, A. Knauer, U. Richter, J. Menninger, M. Weyers
"Ordering in GaInAsP detected by diffraction methods"
MRS fall meeting 1995, Symp. Proc. vol. 417 (1996) 49.

I. Rechenberg, A. Höpner, J. Maege, A. Klein, G. Beister, M. Weyers
"Heating and damage of InGaAs/GaAs/AlGaAs laser facets"
Proceedings of IX. IC on Microscopy of Semiconductor Materials, Inst. Phys. Conf. Ser. 146 (1996) 587.

I. Rechenberg, A. Knauer, U. Zeimer, F. Bugge, U. Richter, A. Klein , M. Weyers
"Composition fluctuations in (In,Ga)(As,P) single layers and laser structures based on GaAs"
Proceedings of DRIP VI, Inst. Phys. Conf. Ser. No 149 (1996) 109.

P.H. Hao, L.C. Wang, P. Ressel, J.M. Kuo
"Low resistance (~1x10-6 cm-2) Au/Ge/Pd ohmic contact to n-Al0.5In0.5P"
J. Vac. Sci. & Techn. B 14 (1996) 3244.

E. Nebauer
"XRD Investigations of WSiN and LaB6 Layers on GaAs"
phys. Stat. Sol. (b) 194 (1996) 121.

W. Österle, P. Ressel
"XTEM investigation of Ge/Pd shallow contact to p-In0.53Ga0.47As"
Mater. Sci. & Eng. B 40 (1996) 42.

P. Ressel, M.H. Park, L.C. Wang, E. Kuphal
"Shallow and low-resistive contacts to p-In0.53Ga0.47As based on Pd/Sb and Pd/Ge metallizations"
Electron. Lett. 32 (1996) 1734.

P. Ressel, P.W. Leech, G.K. Reeves, W. Zhou, E. Kuphal
"Pd/Zn/Pd/Au and Pd/Zn/Au/LaB6/Au contacts to p-type In0.53Ga0.47As"
Appl. Phys. Lett. 68 (1996) 1841.

P. Ressel, W. Österle, I. Urban, I. Dörfel, A. Klein, K. Vogel, H. Kräutle
"Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As"
J. Appl. Phys. 80 (1996) 3910.

H. Strusny, P. Ressel, K. Vogel, J. Würfl
"He implant-damage isolation of MOVPE grown GaAs/InGaP/InGaAsP layers"
Nucl. Instr. & Meth. in Phys. Res. B 112 (1996) 298.

J. Würfl, B. Janke, K.H. Rooch, S. Thierbach
"Technology of GaAs-based MMICs for high temperature applications"
Proceedings 22nd International Symposium on Compound Semiconductors (ISCS) Inst. Phys. Conf. Ser. 145 (1996) 615.

J. Würfl, B. Janke, E. Nebauer, S. Thierbach, P. Wolter
"High Temperature MESFET-Based Integrated Circuits Operating up to 300°C"
Proceedings of International Electron Devices Meeting (IEDM) Technical Digest ISBN 0-7803-3394-2 (1996) 219.