A High-Gain X-Band GaN-MMIC Power Amplifier

E. Ersoy, C. Meliani, S. Chevtchenko, P. Kurpas, M. Matalla, and W. Heinrich

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Published in:
7th German Microwave Conference (GeMiC 2012), Ilmenau, Germany, Mar. 12-14, paper 1561 (2012).

In this paper, a high-gain X-band MMIC power amplifier is presented. The amplifier is based on 0.25µm-gate GaN HEMTs and realized as coplanar circuit using the 4-inch process line at FBH. The circuit delivers almost 9 W output power at 10 GHz, with final stage drain efficiency of 32%.

Index Terms:
Gallium nitride, power amplifier, X-band, CPW.

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