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AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)
E. Bahat-Treidel, O. Hilt, F. Brunner, V. Sidorov, J. Würfl, and G. Tränkle
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Published in:
IEEE Trans. Electron Devices, vol. 57, no. 6, pp. 1208-1216 (2010).
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Abstract:
GaN-based high-electron mobility transistors with
planar multiple grating field plates (MGFPs) for high-voltage
operation are described. A synergy effect with additional electron
channel confinement by using a heterojunction AlGaN back
barrier (BB) is demonstrated. Suppression of the OFF-state subthreshold
gate and drain leakage currents enables breakdown
voltage enhancement over 700 V and a low ON-state resistance of
0.68 mΩ × cm2. Such devices have a minor tradeoff in ON-state
resistance, lag factor, maximum oscillation frequency, and cutoff
frequency. A systematic study of the MGFP design and the effect
of Al composition in the BB is described. Physics-based device
simulation results give insight into electric field distribution and
charge carrier concentration, depending on the field plate design.
Index Terms:
AlGaN/GaN high-electron mobility transistor (HEMT), double-heterojunction (DH)-HEMT, field plates (FPs),
multiple grating field plates (MGFPs).
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