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Optical and Structural Properties of In0.08GaN/In0.02GaN Multiple Quantum Wells Grown at Different Temperatures and with Different Indium Supplies
U. Zeimer1, U. Jahn2, V. Hoffmann1, M. Weyers1, and M. Kneissl1,3
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 4-7, 10117 Berlin, Germany
3 Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
Published in:
J. Electron. Mater., vol. 39, no. 6, pp. 677-683 (2010).
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Abstract:
The optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multiple
quantum wells (MQWs) grown at different temperatures and with different
supplies of indium were analyzed by atomic force microscopy and spectrally
resolved cathodoluminescence (CL). By comparing the contrasts of monochromatic
CL images with high-resolution secondary-electron images of the
sample surface, it is shown that almost all contrasts of the CL images can be
explained by lateral inhomogeneities of both the thickness and the InN mole
fraction of the InGaN layers. Dark contrasts in the CL images solely related to
dislocations were not observed, indicating very weak nonradiative recombination
correlated with threading dislocations in the InGaN quantum wells.
The lateral inhomogeneities of layer thickness and indium incorporation
depend strongly on the growth conditions.
Keywords:
InGaN, quantum wells, optical properties, cathodoluminescence, defects, dislocations
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