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Finite element simulation of the optical modes of semiconductor lasers
J. Pomplun1,2, S. Burger1,2, F. Schmidt1,2, A. Schliwa3, D. Bimberg3, A. Pietrzak4, H. Wenzel4, and G. Erbert4
1 Zuse Institute Berlin, Takustraße 7, 14195 Berlin, Germany
2 JCMwave GmbH, Haarer Straße 14a, 85640 Putzbrunn, Germany
3 Institut für Festkörperphysik, TU Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
4 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Published in:
phys. stat. sol. (b), vol. 247, no. 4, 846-853 (2010).
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Abstract:
In the present paper we investigate optical near fields in
semiconductor lasers. We perform finite element simulations
for two different laser types, namely a super large optical
waveguide (SLOW) laser, which is an edge emitter, and a
vertical cavity surface emitting laser (VCSEL). We give the
mathematical formulation of the different eigenvalue problems
that arise for our examples and explain their numerical solution
with the finite element method (FEM). Thereby, we also
comment on the usage of transparent boundary conditions,
which have to be applied to respect the exterior environment,
e.g., the very large substrate and surrounding air. For theSLOW
laser we compare the computed near fields to experimental data
for different design parameters of the device. For the VCSEL
example a comparison to simplified 1D mode calculations is
carried out.
PACS:
07.05.Tp, 42.55.Px, 78.20.Bh
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