AlGaN/GaN/AlGaN Double Heterojunction HEMTs on n-type SiC Substrates

E. Bahat-Treidel, O. Hilt, F. Brunner, J. Würfl, and G. Tränkle

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Published in:
phys. stat. sol (c), vol. 7, no. 10, pp. 2408-2411 (2010).
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Abstract:
In this paper, we present a systematic study of AlGaN/GaN/AlGaN double heterojunction high-electron-mobility-transistor devices on n-type SiC substrate and the dependence of the GaN channel layer thickness. A device breakdown voltage enhancement was achieved by increasing the electron confinement in the transistor channel using an AlGaN back barrier-layer structure. An optimized electron confinement results in a scaling of breakdown voltage with device geometry, low on-state resistance and a significantly reduced sub-threshold drain leakage current.

Index Terms:
AlGaN/GaN/AlGaN, electrical properties, HEMTs, heterojunctions, GaN.

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