 |
A Novel Atmospheric Microplasma Source with Integrated GaN HEMT Microwave Power Oscillator
R. Gesche1, S. Kühn1, H.-E. Porteanu1, R. Kovacs2, and J. Scherer2
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
2 Aurion Anlagentechnik GmbH, Seligenstadt, Germany
Published in:
SVC 52nd Annual Technical Conf., Santa Clara, CA, May 9-14, pp. 293-296 (2009).
© Copyright 2006-2010, Society of Vacuum Coaters (SVC™). Personal use of this material is permitted. However, permission to reprint/republish this material for
advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists,
or to reuse any copyrighted component of this work in other works must be obtained from the Society of Vacuum Coaters.
Abstract:
A novel atmospheric microplasma source is presented, where
the microwave power is generated by an integrated power
oscillator, which is based on a GaN HEMT transistor. A
microwave resonator acts as plasma electrode, performs the
impedance transformation for ignition and plasma operation,
and determines the oscillation frequency. The source operates
at a frequency around 2.45 GHz with a maximum oscillator
power of 30W. The size of the complete source module including
electrode, resonator and microwave oscillator is as
small as 30 mm by 30 mm by 40 mm, the visible afterglow
plasma flame has a diameter of approx. 1 mm and a length
up to 5 mm.
|
|
