Monolithically Integrated GaInP/GaAs High-Voltage HBTs and Fast Power Schottky Diodes for Switch-Mode Amplifiers

Published in:
Conf. Dig. CS MANTECH 2009, pp. 213-216 (2009).
© Copyright 2009 CSMantech All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the CSMantech.

Abstract:
Based on mature and high-yield high-voltage (HV) HBT technology monolithically integrated ultra-fast Schottky diodes are developed. The Schottky diodes take full advantage of the optimized HV-HBT layer structure allowing for diode´s breakdown voltage of 80 V. Due to optimized thermal mounting using priopriatery flip-chip soldering high current switching capability up to 4 A at 60 V was demonstrated. On the other hand, short diode´s recovery time of 9 - 12 ps was evaluated. Thus, the integrated HV-HBTs and Schottky diodes are well suited for high speed MMICs for power applications. Novel switched-mode power amplifier circuits were fabricated yielding a digital output power of 5.4 W with very high collector efficiency of 92% at data rates of 1.8 Gbps.

Keywords:
fast Schottky diode, GaInP/GaAs HBT, power HBT, integrated circuits, switch-mode amplifier

Full version in pdf-format.