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Engineered linearity of GaN-based HEMTs power devices by tailoring transfer characteristics
E. Bahat-Treidel, I. Khalil, O. Hilt, J. Würfl, and G. Tränkle
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Published in:
phys. stat. sol. (c), vol. 6, no. 6, pp. 1378-1381 (2009).
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Abstract:
This paper presents an innovative method of increasing inherent
linearity of GaN/AlGaN HEMT by tailoring the effective
transconductance. The effective transconductance of the
whole device is tailored by optimizing individual transconductance
of subunits of the device. In this work GaN HEMT
units were individually optimized with different recess depth.
The unit cells with different recess dept were optimized such
a way so that the resultant transfer characteristic is suitable
for high linearity.
PACS:
73.40.Kp, 73.61.Ey, 85.30.De, 85.30.Tv
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