Influence of Dynamic Access Resistances on the Linearity of Large GaN HEMT Powerbars

Published in:
IEEE Microwave Wireless Compon. Lett., vol. 19, no. 8, pp. 527-529 (2009).
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Abstract:
This paper presents a study of the dynamic access resistance related nonlinearity of GaN HEMT devices with very large periphery. The bias-dependent access resistance is deembeded to the chip reference plane. Our measurement results show that the bias dependence for such a large device is insignificant, at least within the investigated 2 GHz frequency band. Instead, the main source of nonlinearity is the current source. Quantitatively, linearity measurements reveal a good linear behavior of these devices.

Index Terms:
Amplifier distortion, cross modulation distortion, distortion, dynamic access resistance, intermodulation distortion, microwave power field effect transistor (FET) amplifiers

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