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Electroluminescence characterization of AlGaN/GaN HEMTs
R. Lossy1, A. Glowacki2, C. Boit2, and J. Würfl1
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Technische Universität Berlin, E2, Einsteinufer 19, 10587 Berlin, Germany
Published in:
phys. stat. sol. (c), vol. 6, no. 6, pp. 1382-1385 (2009).
© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Personal use of this material is permitted. However, permission to reprint/republish this material for
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Abstract:
Microscopic electroluminescence (EL) measurements on Al-
GaN/GaN high-electron-mobility transistors are reported.
Photon emission is detected from front side and also from the
backside of the wafer. Using both detection geometries manufacturing
related dependencies can beidentified. Investigation
of EL from backside during pinch-off operation reveals detailed
emission pattern that are partially hidden during front
side observation. Spectrally resolved photon emission shows
different pattern for on-state and off-state condition.
PACS:
78.60.Fi, 85.30.Tv, 85.35.Be
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