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Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes
K. Posilovic1, T. Kettler1, V.A. Shchukin1, N.N. Ledentsov1, U.W. Pohl1, D. Bimberg1, J. Fricke2, A. Ginolas2, G. Erbert2, G. Tränkle2, J. Jönsson3, M. Weyers3
1 Institut für Festkörperphysik, Technische Universität Berlin, PN5-2, Hardenbergstr. 36, 10623 Berlin, Germany
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
3 TESAG, Three-Five Epitaxial Services AG, Kekulé-Str. 2-4, 12489 Berlin, Germany
Published in:
Appl. Phys. Lett. vol. 93, p. 221102 (2008).
© Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Abstract:
One-dimensional photonic crystal lasers emitting in the 850 nm range show high internal quantum
efficiencies of 93% and very narrow vertical beam divergence of 7.1° (full width at half maximum).
50 µm broad area lasers with unpassivated facets exhibit a high total output power of nearly 20 W
in pulsed mode with a divergence of 9.5° x 11.3° leading to a record brightness of
3x108 W cm-2 sr-1, being presently the best value ever reported for a single broad area laser diode.
100 µm broad devices with unpassivated facets show continuous wave operation with an output
power of 1.9 W.
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