High-power laser diodes emitting light above 1100 nm with a small vertical divergence angle of 13°

Published in:
Opt. Lett., vol. 33, no. 19, pp. 2188-2190 (2008).
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Abstract:
Laser diodes with highly strained InGaAs quantum wells, emitting at 1130 nm, embedded in a GaAs waveguide were investigated. This Letter reviews the design of the vertical structure for enclosing high output power in angles smaller than 18°. Example designs were processed to 200 µm stripe-width lasers with an 8-mm-long optical cavity. When these are mounted on C mounts, they give an output power of 38 W under quasi-cw operation from a single emitter.

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