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Infrared emission from the substrate of GaAs-based semiconductor lasers
M. Ziegler1, R. Pomraenke2, M. Felger2, J.W. Tomm1, P. Vasa2, C. Lienau2, M.B. Sanayeh3, A. Gomez-Iglesias3, M. Reufer3, F. Bugge4 and G. Erbert4
1 Max-Born-Institut, Max-Born-Str. 2A, 12489 Berlin, Germany
2 Institut für Physik, Carl von Ossietzky Universität, 26111 Oldenburg, Germany
3 OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany
4 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Published in:
Applied Physics Letters, Vol. 93, 041101 (2008).
© Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Abstract:
We report on the origin of three additional low-energy spontaneously emitted bands in
GaAs-based broad-area laser diodes. Spectrally and spatially resolved scanning optical
microscopy and Fourier-transform infrared spectroscopy assign the different contributions
to bandtail-related luminescence from the gain region as well as interband and deep-level-related
luminescences from the GaAs substrate. The latter processes are photoexcited due to spontaneous
emission from the active region followed by a cascaded photon-recycling process within the substrate.
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