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High-brightness quantum well and quantum dot tapered lasers
N. Michela, M. Krakowskia, I. Hassiaouia, M. Calligaroa, M. Lecomtea, O. Parillauda, P. Weinmannb, C. Zimmermannb, W. Kaiserb, M. Kampb, A. Forchelb, E.-M. Pavelescuc, J.-P. Reithmaierc, B. Sumpfd, G. Erbertd, M. Kelemene, R. Ostendorfe, J.-M. García-Tijerof, H. Odriozolaf, I. Esquiviasf
a Alcatel-Thales III-V Lab, Route Départementale 128, 91767 Palaiseau, France
b Technische Physik, Universitä´ Wuerzburg (UWUERZ), 97070 Wuerzburg, Germany
c Institute of Nanostructure Technologies and Analytics, Universität Kassel, Heinrich-Plett-Str. 40, D-34132, Kassel, Germany
d Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
e Fraunhofer Institut f?ewandte Festk?rpohysik (IAF), Tullastraߥ 72, 79108, Freiburg, Germany
f Universidad Polit飮ica de Madrid (UPM), ETSI Telecomunicací¯®, Madrid 28040, Spain
Published in:
Proc. SPIE, vol. 6909, no. 690918 (2008).
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Abstract:
Several types of high-brightness near-infrared tapered quantum well and quantum dots tapered lasers are reviewed and
compared. Recent developments include record-high brightness quantum well tapered lasers at 810 nm and 975 nm (up
to 8.3 W CW, diffraction limited), high wall-plug efficiency gain-guided and index-guided tapered lasers (up to 57%),
narrow slow axis far-field (2.5° FWHM) index-guided tapered lasers at 975 nm, wavelength-stable (down to
0.09 nm/K), high-brightness quantum dots tapered lasers at 920 and 975 nm, and quantum dots tapered laser bars (up to
14 W CW) at 920 nm, with narrow far-field in the slow axis (3° FWHM).
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