Peak power from 60-µm Broad Area Single Emitter Limited to 50-W by Carrier Escape

A. Pietrzak, P. Crump, R. Staske, H. Wenzel, G. Erbert and G. Tränkle

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Published in:
Conf. on Lasers and Electro-Optics (CLEO/QELS), San Jose, CA, May 4-9, paper CMN2 (2008).
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Abstract:
Passivated 1100-nm broad area lasers reach maximum power of 50-W from a 60-µm stripe under short pulse conditions. Simulations predict and spontaneous emission measurements confirm power is limited by carrier escape from the active region.

OCIS Codes:
(140.5960) Semiconductor lasers; (250.5590) Quantum-well, -wire and -dot devices

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