290-fs pulses from a semiconductor disk laser

P. Klopp¹, F. Saas¹, M. Zorn², M. Weyers², and U. Griebner¹

¹ Max-Born-Institute, Max-Born-Strasse 2A, D-12489 Berlin, Germany
² Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Published in:
Opt. Express, vol. 16, no. 8, pp. 5770-5775 (2008).
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Abstract:
Transform-limited pulses as short as 290 fs at 1036 nm are generated by a diode-pumped semiconductor disk laser. The allsemiconductor laser employs a graded-gap-barrier design in the gain section. A fast saturable absorber mirror serves as a passive mode-locker. No further elements for internal or external dispersion control are required.

OCIS codes:
(140.3480) Lasers, diode-pumped; (140.4050) Mode-locked lasers; (140.5960) Semiconductor lasers; (140.7260) Vertical cavity surface emitting lasers.

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