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Detection of terahertz radiation with diode lasers
C. Brenner1, S. Hoffmann1, M.R. Hofmann1, M. Salhi2, M. Koch2, A. Klehr3, G. Erbert3, and G. Tränkle3
1 Ruhr University Bochum, Optoelectronics Devices and Materials, Universitätsstr. 150, Bochum, 44780, Germany
2 Technical University Braunschweig, Institute for High- Frequency Technology, Braunschweig, 38106, Germany
3 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
Published in:
Electronics Letters 2nd August 2007 Vol. 43, Iss. 16, p. 870-872.
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Abstract:
A standard commercial semiconductor is shown to be able to detect
terahertz (THz) radiation at room temperature. A voltage variation
across the active region of the device upon incident THz radiation is
measured. The detected voltage signal scales linearly with the THz
intensity measured with a Golay cell. A detailed analysis shows that
thermal effects following the THz absorption by the carrier plasma
play an important role in this detection process.
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