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High-power 894 nm monolithic distributed-feedback laser
A. Klehr, H. Wenzel, O. Brox, F. Bugge, G. Erbert, T-P. Nguyen, and G. Tränkle
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
Published in:
Optics Express, vol. 15, no. 18, pp. 11364-11369, 2007.
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Abstract:
A ridge-waveguide InGaAs/GaAsP laser, emitting up to 250 mW
in a single lateral and longitudinal mode at a wavelength of 894 nm, is
presented. The distributed feedback is provided by a second order grating,
formed into an InGaP/GaAs/InGaP multilayer structure. Owing to the stable
lasing frequency, the large side mode suppression ratio (> 40 dB) and small
spectral line width (< 200 kHz) the diode laser is well suited for caesium D1
spectroscopy. This was verified by the measurement of the hyperfine
structure of the D1 line.
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