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Mechanism of LiAlO2 decomposition during the GaN growth on (100) γ-LiAlO2
A. Mogilatenko and W. Neumann
Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, 12489 Berlin, Germany
E. Richter and M. Weyers
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
B. Velickov and R. Uecker
Institut für Kristallzüchtung, Max-Born-Strasse 2, 12489 Berlin, Germany
Published in:
Journal of Applied Physics 102, 023519 (2007).
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Abstract:
c-plane oriented GaN nucleation layers have been grown on (100) γ-LiAlO2 substrates by hydride
vapor phase epitaxy. Longer recrystallization time favors the decomposition of the LiAlO2 substrate
underneath the layers. The LiAlO2 decomposition at the GaN/LiAlO2 interface is accompanied by
the formation of the epitaxial LiAl5O8 crystallites which are at least partly surrounded by cavities
in the LiAlO2 matrix. The results suggest a mechanism that explains the spontaneous separation of
thick GaN layers from LiAlO2 substrates during post-growth cooling down.
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