Structural and optical properties of ELOG a-plane GaN grown with MOVPE over different stripe directions on r-plane sapphire

C. Netzel, T. Wernicke, U. Zeimer, and M. Weyers

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Published in:
Proc. 12th European Workshop on Metalorganic Vapour Phase Epitaxy, June 2007, Bratislava, Slovakia, G6, pp. 257-260.

Full version in pdf-format.