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A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65% PAE
Ch. Meliani1, M. Rudolph1, P. Kurpas1, L. Schmidt1, C.N. Rheinfelder2, W. Heinrich1
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Ubidyne, 89081 Ulm, Germany
Published in:
IEEE MTT-S Int. Microwave Symp. Dig., 2007, 1087-1090.
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Abstract:
A class-E amplifier in the 2 GHz band is presented. It
is realized as a coplanar MMIC using a high-voltage GaAs-HBT
process. At 37 dBm output power, a high PAE of 65% with 71%
collector efficiency are achieved. The gain of the amplifier in the
switch-mode region reaches 11 dB. These are very competitive
values for PAE, collector efficiency, and output power and the
highest ones using GaAs-HBT technology. The measured data is
supported by in-depth circuit simulation results highlighting the
special conditions and requirements of switch-mode operation.
Index Terms:
HBT, GaAs, class-E, power amplifier, PAE
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