The Influence of Microwave Two-Port Noise on Residual Phase Noise in GaAs-HBTs

Published in:
Dig. 34th European Microwave Conference, Amsterdam, 2004, p. 945-948.

Abstract:
We present residual phase noise measurements of GaInP/GaAs HBTs, which are widely used as gain elements in microwave MMIC oscillators. These measurements allow to separate the influence of the noise sources on oscillator phase noise. It turns out that the microwave noise of the device near the oscillation frequency is an important source of phase noise for offset frequencies ≥ 100 kHz. Simulation results based on a transistor noise-model show good agreement with experimental results.

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