Simulation of single-mode high-power semiconductor lasers
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany
Published in:
Proceedings of Physics and Simulation of Optoelectronic Devices IV, Proc. SPIE 2693 (1996) 418..
Abstract:
Theoretical studies of aluminum-free RISAS and ARROW type lasers operating at 800 nm and 940 nm, respectively, are
presented. At 800 nm, the electron leakage current over the hetero barriers leads to a sub-linear light-current characteristic.
In order to obtain a high output power at moderate currents, either the losses must be kept as small as possible, or the barriers
for the electrons must be increased, for example by higher p-doping. At 940 nm, the leakage current is not as problematic.
In both RISAS and ARROW lasers, excess loss for the higher order modes is needed to prevent them from lasing. The
theoretical maximum single mode power of ARROW lasers obtained with a two-dimensional FEM-solution of the scalar
wave equation is lower than found with the effective index method.
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