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Publications
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106
B. Sumpf, M. Zorn, J. Fricke, P. Ressel, H. Wenzel, G. Erbert, M. Weyers, G. Tränkle
"1 W reliable operation of broad area lasers and 8 W reliable operation of 5 mm wide laser bars at 650 nm"
Proc. SPIE 6876 (2008) 68760T
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105
B. Sumpf, P. Adamiec, M. Zorn, P. Froese, J. Fricke, P. Ressel, H. Wenzel, M. Weyers, G. Erbert, G. Tränkle
"650 nm tapered lasers with 1 W maximum output power and nearly diffraction limited beam quality at 500 mW"
Proc. SPIE 6876 (2008) 68760M
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104
P. Crump, H. Wenzel, G. Erbert, S. Einfeldt, P. Ressel, M. Zorn, F. Bugge, M. Spreemann, F. Dittmar, R. Staske, and G. Tränkle
"808-nm TM Polarised High Power Broad Area Lasers with 69.5% Power Conversion Efficiency at 71-W"
Conference Digest CLEO/QELS 2008, Paper CMN3
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103
P. Klopp, F. Saas, M. Zorn, M. Weyers, and U. Griebner
"290-fs pulses from a semiconductor disk laser"
Optics Express 16 (2008) 5770
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102
B. Brüser, T. Panzner, S. Grigorian, J. Grenzer, M. Zorn, U. Zeimer, and U. Pietsch
"High resolution measurement of the thermal expansion coefficient of semiconductor multilayer lateral nanostructures"
phys. stat. sol. (a) 205 (2008) 316
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101
B. Sumpf, M. Zorn, R. Staske, J. Fricke, P. Ressel, A. Ginolas, K. Paschke, G. Erbert, M. Weyers, G. Tränkle
"3-W Broad Area Lasers and 12-W Bars With Conversion Efficiencies up to 40% at 650 nm"
IEEE J. Select. Top. Quant. Electron. 13 (2007) 1188-1193
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100
S. Rivier, A. Schmidt, C. Kränkel, R. Peters, K. Petermann, G. Huber, M. Zorn, M. Weyers, A. Klehr, G. Erbert, V. Petrov, and U. Griebner
"Ultrashort pulse Yb:LaSc3(BO3)4 mode-locked oscillator"
Optics Express 15 (2007) 15539
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99
U. Zeimer, J. Grenzer, D. Korn, S. Döring, M. Zorn, W. Pittroff, U. Pietsch, F. Saas, and M. Weyers
"X-ray diffraction spot mapping - a tool to study structural properties of semiconductor disk laser devices"
physica status solidi (a) 204 (2007) 2753
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98
B. Sumpf, M. Zorn, M. Maiwald, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, G. Tränkle
"5.5 W output power from 100 µm stripe width lasers at 670 nm with a vertical far-field angle of 32 degrees"
Conference Digest CLEO/Europe 2007, Paper CB14-4
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97
F. Saas, V. Talalaev, J.W. Tomm, G. Steinmeyer, U. Griebner, M. Zorn, and M. Weyers
"Optically pumped semiconductor disk laser with graded and step indices for cw and ultrashort pulse generation"
Conference Digest CLEO/Europe 2007, Paper CB13-3
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96
B. Sumpf, G. Erbert, J. Fricke, P. Froese, R. Häring, W.G. Kaenders, A. Klehr, F. Lison, P. Ressel, H. Wenzel, M. Weyers, M. Zorn, G. Tränkle
"670 nm tapered lasers and amplifiers with output powers P > 1 W and nearly diffraction limited beam quality"
Proc. SPIE 6485 (2007) 648517
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95
J.W. Tomm, T.Q. Tien, M. Ziegler, F. Weik, B. Sumpf, M. Zorn, U. Zeimer, G. Erbert
"Degradation behavior and thermal properties of red (650 nm) high-power diode single emitters and laser bars"
Proc. SPIE 6456 (2007) 645606
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94
B. Sumpf, M. Zorn, R. Staske, J. Fricke, A. Ginolas, K. Häusler, W. Pittroff, P. Ressel, G. Erbert, M. Weyers, G. Tränkle
"650 nm InGaP broad area lasers with 5000 h reliable operation at 600 mW"
IEEE Photon. Technol. Lett. 19 (2007) 118
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93
M. Zorn, H. Wenzel, U. Zeimer, B. Sumpf, G. Erbert and M. Weyers
"High-power red laser diodes grown by MOVPE"
J. Crystal Growth 298 (2007) 667
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92
M. Zorn, T. Trepk, T. Schenk, J.-T. Zettler and M. Weyers
"AlGaInP growth parameter optimisation during MOVPE for opto-electronic devices"
J. Crystal Growth 298 (2007) 23
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91
M. Zorn, and M. Weyers
"Comprehensive study of (Al)GaAs Si-doping using reflectance anisotropy spectroscopy in metal-organic vapour-phase epitaxy"
J. Phys. D: Appl. Phys. 40 (2007) 878
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90
S. Rivier, X. Mateos, J. Liu, V. Petrov, and U. Griebner, M. Zorn, M. Weyers, H. Zhang, J. Wang, and M. Jiang
"Passively mode-locked Yb:LuVO4 oscillator"
Optics Express 14 (2006) 11668
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89
T.Q. Tien, F. Weik, J.W. Tomm, B. Sumpf, M. Zorn, U. Zeimer, G. Erbert
"Thermal properties and degradation behavior of red-emitting high-power diode lasers"
Appl. Phys. Lett. 89 (2006) 181112
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88
F. Saas, V. Talalaev, U. Griebner, J.W. Tomm, M. Zorn, A. Knigge, M. Weyers
"Optically pumped semiconductor disk laser with graded and step indices"
Appl. Phys. Lett. 89 (2006) 151120
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87
F. Saas, G. Steinmeyer, U. Griebner, M. Zorn, M. Weyers
"Exciton resonance tuning for the generation of subpicosecond pulses from a mode-locked semiconductor disk laser"
Appl. Phys. Lett. 89 (2006) 141107
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86
B. Sumpf, M. Zorn, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, G. Tränkle
"5-W Reliable Operation Over 2000 h of 5-mm-Wide 650-nm AlGaInP-GaInP-AlGaAs Laser Bars With Asymmetric Cladding Layers"
Photon. Technol. Lett. 18 (2006) 1955
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85
B. Sumpf, M. Zorn, R. Staske, J. Fricke, P. Ressel, A. Ginolas, K. Paschke, G. Erbert, M. Weyers, G. Tränkle
"3 W-broad area lasers and 12 W-bars with conversion efficiencies up to 40% at 650 nm"
2006 IEEE 20th International Semiconductor Laser Conference, September 2006, Hawaii, USA, TuC3, IEEE Catalog Number: 06CH37738C, ISBN 0-7803-9560-3, Library of Congress: 2005934158
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84
M. Zorn, F. Bugge, T. Schenk, U. Zeimer, M. Weyers and J.-T. Zettler
"Feedback controlled growth of strain-balanced InGaAs multiple quantum wells in metal-organic vapour phase epitaxy using an in situ curvature sensor"
Semiconductor Science and Technology 21 (2006) L45
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83
B. Sumpf, M. Zorn, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, G. Tränkle
"High-efficient 650 nm laser bars with an output power of about 10 W and a wall-plug efficiency of 30%"
Proc. SPIE 6133 (2006) 78
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82
M. Zorn, J.-T. Zettler, A. Knauer and M. Weyers
"In situ determination and control of AlGaInP composition during MOVPE growth"
Journal of Crystal Growth 287 (2006) 637-641.
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81
S.-S. Beyertt, M. Zorn, T. Kübler, H. Wenzel, M. Weyers, A. Giesen, G. Tränkle, U. Brauch
"Optical In-Well Pumping of a Semiconductor Disk Laser With High Optical Efficiency"
IEEE J. Quant. Electron. 41 (2005) 1439-1449.
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80
M. Zorn, J.-T. Zettler
"Development and control of MOVPE growth processes for devices using reflectance anisotropy spectroscopy and normalized reflectance"
physica status solidi (b) 242 (2005) 2587-2594.
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79
H. Hardtdegen, N. Kaluza, R. Steins, Y.S. Cho, Z. Sofer, M. Zorn, K. Haberland, J.-T. Zettler
"Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides"
physica status solidi (b) 242 (2005) 2581-2586.
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78
O. Casel, D. Woll, M.A. Tremont, H. Fuchs, R. Wallenstein, E. Gerster, P. Unger, M. Zorn and M. Weyers
"Blue 489-nm picosecond pulses generated by intracavity frequency doubling in a passively mode-locked optically pumped semiconductor disk laser"
Appl. Phys. B 81 (2005) 443-446.
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77
S. Rivier, X. Mateos, V. Petrov, U. Griebner, A. Aznar, O. Silvestre, R. Sole, M. Aguilo, F. Diaz, M. Zorn and M. Weyers
"Mode-locked laser operation of epitaxially grown Yb:KLu(WO4)2 composites"
Optics Letters 30 (2005) 2484-2486.
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76
T.K. Sharma, M. Zorn, U. Zeimer, H. Kissel, F. Bugge, M. Weyers
"Highly strained InGaAs/GaAs quantum wells emitting beyond 1.2 µm"
Crystal Research and Technology 40 (2005) 877-881.
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75
S.-S. Beyertt, U. Brauch, A. Giesen, E. Gerster, M. Zorn
"Direct Pumping of Quantum Wells Improves Performance of Semiconductor Thin-Disk Lasers"
Photonics Spectra, June 2005, p. 60-66.
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74
M. Zorn, T.K. Tien, J.W. Tomm, H. Kissel, U. Zeimer, F. Saas, U. Griebner, M. Weyers
"MOVPE growth of semiconductor disk laser (SCDL) structures"
Proc. 11th European Workshop on Metalorganic Vapour Phase Epitaxy, June 2005, Lausanne, Switzerland, F09, p. 309-311.
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73
M. Zorn, J.-T. Zettler, U. Zeimer, M. Weyers
"On the possiblity of in-situ composition determination during AlGaInP growth in MOVPE"
Proc. 11th European Workshop on Metalorganic Vapour Phase Epitaxy, June 2005, Lausanne, Switzerland, C03, p. 163-165.
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72
U. Griebner, S. Rivier, V. Petrov, M. Zorn, G. Erbert, M. Weyers, X. Mateos, M.Aguiló, J. Massons, F. Díaz
"Passively mode-locked Yb:KLu(WO4)2 oscillators"
Optics Express 13 (2005) 3465
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71
M. Pristovsek, M. Zorn, U. Zeimer, M. Weyers
"Growth of strained GaAsSb layers on GaAs(001) by MOVPE"
Journal of Crystal Growth 276 (2005) 347
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70
M. Zorn, M. Weyers
"Application of reflectance anisotropy spectroscopy to laser diode growth in MOVPE"
Journal of Crystal Growth 276 (2005) 29
|
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69
A. Bhattacharya, M. Nasarek, U. Zeimer, A. Klein, M. Zorn, F. Bugge, S. Gramlich, M. Weyers
"Comprehensive characterisation of MOVPE-grown AlGaAs/AlAs distributed Bragg reflector structures by optical reflectance, X-ray diffraction and atomic force microscopy"
Journal of Crystal Growth 274 (2005) 331
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68
F. Brunner, S. Weeke, M. Zorn, M. Weyers
"Growth monitoring of GaAsSb:C/InP heterostructures with reflectance anisotropy spectroscopy"
Journal of Crystal Growth 272 (2004) 111
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67
R. Steins, N. Kaluza, H. Hardtdegen, M. Zorn, K. Haberland, J.-T. Zettler
"Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE"
Journal of Crystal Growth 272 (2004) 81
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66
M. Pristovsek, M. Zorn, M. Weyers
"In-situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy"
Journal of Crystal Growth 262 (2004) 78
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65
J. W. Tomm, V. Strelchuk, A. Gerhardt, U. Zeimer, M. Zorn, H. Kissel, M. Weyers, J. Jimenez
"Properties of As+-implanted and annealed GaAs and InGaAs quantum wells: Structural and band-structure modifications"
Journal of Applied Physics 95 (2004) 1122
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64
H. Hardtdegen, M. Zorn, J.-T. Zettler
"Benefits of optical in-situ measurements for the MOVPE of compound semiconductor layers and device structures"
Proc. 12th International Workshop on the Physics of Semiconductor Devices, eds. K.N. Bhat and A. DasGupta, Narosa Publishing House, New Delhi (2004) 83-89
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63
B. Ullrich, R. Schroeder, A. Knigge, M. Zorn, M. Weyers
"In situ analysis of a vertical-cavity surface-emitting laser active layer by two-photon spectroscopy"
Optical Engineering 42 (2003) 1152-1156
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62
M. Zorn, H. Wenzel, A. Knigge, U. Zeimer, M. Weyers
"Comparison of AlGaAs and AlInP cladding layers for red edge-emitting lasers"
Proc. 10th European Workshop on Metal-Organic Vapour Phase Epitaxy, June 2003, Lecce, Italy, PS.V.09, ISBN 88-8305-007-X
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61
A. Knigge, M. Zorn, J. Sebastian, K. Vogel, H. Wenzel, M. Weyers, G. Tränkle
"High-efficiency AlGaInP/AlGaAs vertical-cavity surface-emitting lasers with 650 nm wavelength"
IEE Proc.-Optoelectron. 150 (2003) 110
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60
F. Bugge, M. Zorn, U. Zeimer, T. Sharma, H. Kissel, R. Hülsewede, G. Erbert, M. Weyers
"Highly strained very high-power laser diodes with InGaAs QWs"
Journal of Crystal Growth 248 (2003) 354
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59
K. Haberland, M. Zorn, A. Klein, A. Bhattacharya, M. Weyers, J.-T. Zettler, W. Richter
"In-situ determination of interface roughness in MOVPE-grown visible VCSELs by reflectance spectroscopy"
Journal of Crystal Growth 248 (2003) 194
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58
M. Zorn, A. Knigge, U. Zeimer, A. Klein, H. Kissel, M. Weyers, G. Tränkle
"MOVPE growth of visible vertical-cavity surface-emitting lasers (VCSELs)" (invited)
Journal of Crystal Growth 248 (2003) 186-193
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|
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57
R. Schroeder, A. Knigge, M. Zorn, M. Weyers, B. Ullrich
"Femtosecond excitation cavity studies and superluminescence by two-photon absorption in vertical cavity lasers at 300 K"
Physical Review B 66 (2002) 245302
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56
A. Knigge, R. Franke, S. Knigge, B. Sumpf, K. Vogel, M. Zorn, M. Weyers, G. Tränkle
"650-nm Vertical-Cavity Surface-Emitting Lasers: Laser Properties and Reliability Investigations"
Photonics Technology Letters 14 (2002) 1385
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55
A. Knigge, M. Zorn, M. Weyers, G. Tränkle
"High-performance vertical-cavity surface-emitting lasers with emission wavelength between 650nm and 670nm"
Electronics Letters 38 (2002) 882
|
|
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54
T. K. Sharma, M. Zorn, F. Bugge, R. Hülsewede, G. Erbert, M. Weyers
"High-power highly strained InGaAs quantum-well lasers operating at 1.2 µm"
Photonics Technology Letters 14 (2002) 887
|
|
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53
A. Knigge, M. Zorn, M. Weyers, G. Tränkle
"Red VCSELs: more than 4 mW output power at 650 nm"
Digest of the LEOS Summer Topical Meetings (Cat.No. 02TH8610), 2002, pp. MF1-1-2, 66
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52
A. Knigge, M. Zorn, H. Wenzel, M. Weyers, G. Tränkle
"High efficiency AlGaInP/AlGaAs vertical-cavity surface-emitting lasers with 650 nm wavelength"
Inst. Phys. Conf. Ser. 170 (2002) 189
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51
K. Haberland, A. Kaluza, M. Zorn, M. Pristovsek, H. Hardtdegen, M. Weyers, J.-T. Zettler, W. Richter
"Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE"
Journal of Crystal Growth 240 (2002) 87
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50
M. Zorn, K. Haberland, A. Knigge, A. Bhattacharya, M. Weyers, J.-T. Zettler, W. Richter
"MOVPE process development for 650 nm VCSELs using optical in-situ techniques"
Journal of Crystal Growth 235 (2002) 25-34
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49
A. Bhattacharya, K. Haberland, F. Poser, J.-T. Zettler, M. Zorn, M. Weyers, W. Richter
"In-situ characterization of epitaxial semiconductor growth by reflectance anisotropy spectroscopy"
Proceedings of the "International Workshop on the Physics of Semiconductor Devices" (IWPSD 2001), December 11 - 15, 2001 , Delhi, India
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48
M. Pristovsek, S. Tsukamoto, N. Koguchi, B. Han, K. Haberland, J.-T. Zettler, W. Richter, M. Zorn, M. Weyers
"In-situ Determination of the Carrier Concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy"
physica status solidi (a) 188 (2001) 1423
|
|
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47
A. Knigge, M. Zorn, H. Wenzel, M. Weyers, G. Tränkle
"High efficiency AlGalnP-based 650nm vertical-cavity surface-emitting lasers"
Electronics Letters 37 (2001) 1222
|
|
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46
S. Visbeck, T. Hannappel, M. Zorn, J.-T. Zettler, F. Willig
"Temperature dependence and origin of InP(001) reflectance anisotropy down to 20 K"
Physical Review B 63 (2001) 245303
|
|
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45
R. Schneider, A. Klein, M. Zorn, M. Weyers, W. Neumann
"TEM investigations of oxidation phenomena in (Al,Ga)As/AlAs"
Proceedings of the Royal Microscopical Society: "Microscopy of Semiconducting Materials XII", Oxford, UK 25.-29.3.2001, pp. 489-492, IOP Publishing, Bristol, UK
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44
A. Klein, M. Zorn, U. Zeimer, R. Schneider, A. Oster, M. Weyers
"AFM-Characterization of AlGaAs/AlAs Distributed Bragg Reflectors"
Proceedings of the Royal Microscopical Society: "Microscopy of Semiconducting Materials XII", Oxford, UK 25.-29.3.2001, pp. 543-546, IOP Publishing, Bristol, UK
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43
A. Oster, M. Zorn, K. Vogel, J. Fricke, J. Sebastian, W. John, M. Weyers, G. Tränkle
"Continuous Wave Vertical-cavity Surface-emitting Lasers with Emission Wavelength near 650 nm"
Proc. SPIE 4286 (2001) 148
|
|
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42
A. Oster, M. Zorn, H.J. Unold, J. Sebastian, H. Wenzel, W. John, K. Vogel, M. Weyers, G. Tränkle
"Development of 650 nm-emitting VCSELs for cw operation"
2000 IEEE International Symposium on Compound Semiconductors, Institute of Electrical and Electronics Engineers, Inc., IEEE Catalog Number 00TH8498, ISBN 0-7803-6285-6, pp. 377-382, 2001
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41
A. Bhattacharya, M. Zorn, A. Oster, M. Nasarek, H. Wenzel, J. Sebastian, M. Weyers, G. Tränkle
"Optimization of MOVPE growth for 650nm-emitting VCSELs"
Journal of Crystal Growth 221 (2000) 663
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40
T. Hannappel, S. Visbeck, M. Zorn, J.-T. Zettler, F. Willig
"Reflectance anisotropy spectra for the transition from the P-rich to the In-rich surface reconstruction of InP(001)"
Journal of Crystal Growth 221 (2000) 124
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39
P. Vogt, K. Lüdge, M. Zorn, M. Pristovsek, W. Braun, W. Richter, N. Esser
"Surface structure of ordered InGaP(001): The (2x4) reconstruction"
Physical Review B 62 (2000) 12601
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38
P. Vogt, K. Lüdge, M. Zorn, M. Pristovsek, W. Braun, W. Richter, N. Esser
"Atomic structure and composition of the (2x4) reconstruction of InGaP(001)"
J. Vac. Sci. Technol. B 18 (2000) 2210
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37
M. Zorn, P. Kurpas, A. Bhattacharya, M. Weyers, J.-T. Zettler, W. Richter
"Correlation of InGaP(001) surface structure during growth and CuPtB-type bulk ordering" (invited)
Mat. Res. Soc. Symp. Proc. 583 (2000) 217
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36
W. G. Schmidt, N. Esser, A. M. Frisch, P. Vogt, J. Bernholc, F. Bechstedt, M. Zorn, Th. Hannappel, S. Visbeck, F. Willig, W. Richter
"Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum of InP(001)(2x4)"
Physical Review B 61 (2000) R16335
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35
K. Haberland, A. Bhattacharya, M. Zorn, M. Weyers, J.-T. Zettler, W. Richter
"MOVPE growth of (Al,Ga)InP based laser structures monitored by real-time Reflectance Anisotropy Spectroscopy"
J. Electron. Mater. 29(2000) 94 and J. Electron. Mater. 29 (2000) 468
Erratum
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34
M. Zorn, B. Junno, T. Trepk, S. Bose, L. Samuelson, J.-T. Zettler, W. Richter
"Optical response of reconstructed GaP(001) surfaces"
Physical Review B 60 (1999) 11557
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33
M. Zorn, P. Kurpas, A. I. Shkrebtii, B. Junno, A. Bhattacharya, K. Knorr, M. Weyers, L. Samuelson, J.-T. Zettler, and W. Richter
"Correlation of InGaP(001) surface structure during growth and bulk ordering"
Physical Review B 60 (1999) 8185
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|
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32
T. Hannappel, S. Visbeck, K. Knorr, J. Mahrt, M. Zorn, F. Willig
"Preparation of P-rich InP surfaces via MOCVD and surface characterization in UHV"
Applied Physics A 69 (1999) 427
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31
N. Esser, W. G. Schmidt, J. Bernholc, A. M. Frisch, P. Vogt, M. Zorn, M. Pristovsek, W. Richter, F. Bechstedt, Th. Hannappel, S. Visbeck
"GaP(001) and InP(001): Reflectance Anisotropy and surface geometry"
J. Vac. Sci. Technol. B 17 (1999) 1691
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30
M. Zorn, Ph.D. thesis, Technische Universität Berlin, 1999,
"Optical in-situ studies and on-line growth control of binary and ternary III-V semiconductors with respect to the (001) surface"
Mensch & Buch Verlag, Berlin, ISBN 3-89820-004-3
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29
T. Hannappel, S. Visbeck, K. Knorr, M. Zorn, F. Willig
"MOCVD-preparation and in-situ/UHV-analysis of epitaxial InP-films"
Mat. Res. Soc. Symp. Proc. 535 (1999) 207
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28
M. Zorn, P. Kurpas, A. Bhattacharya, M. Weyers, J.-T. Zettler, and W. Richter
"Correlation of InGaP(001) surface structure and bulk ordering during MOVPE growth"
Proc. 8th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, June 1999, Prague, Czech Republic, T2M 6, Edited by V. Gregor and K. Zaveta, ISBN 80-238-3551-3
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27
Th. Hannappel, S. Visbeck, J. Mahrt, K. Knorr, P. Vogt, N. Esser, A. M. Frisch, M. Zorn, W. Richter, and F. Willig
"Characterization of clean P-rich MOCVD-grown InP(001)-films"
Proc. 8th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, June 1999, Prague, Czech Republic, T2M 1, Edited by V. Gregor and K. Zaveta, ISBN 80-238-3551-3
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26
J.-T. Zettler, K. Haberland, M. Zorn, M. Pristovsek, W. Richter, P. Kurpas, M. Weyers
"Real-Time Monitoring of MOVPE Device Growth by Reflectance-Anisotropy-Spectroscopy and Related Optical Techniques"
Journal of Crystal Growth 195 (1998) 151
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25
M. Zorn, T. Trepk, P. Kurpas, M. Weyers, J.-T. Zettler, and W. Richter
"In-situ monitoring and control of InGaP growth on GaAs in MOVPE"
Journal of Crystal Growth 195 (1998) 223
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24
J.-T. Zettler, M. Pristovsek, T. Trepk, A. Shkrebtii, E. Steimetz, M. Zorn, and W. Richter
"Response of the surface dielectric function to dynamic surface modifications: application of reflectance anisotropy spectroscopy and spectroscopic ellipsometry"
Thin Solid Films 313-314 (1998) 537
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23
T. Trepk, M. Zorn, J.-T. Zettler, M. Klein, and W. Richter
"Spectroscopic Ellipsometry applied for in-situ control of lattice matched III-V growth in MOVPE"
Thin Solid Films 313-314 (1998) 496
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22
M. Zorn, T. Trepk, J.-T. Zettler, B. Junno, C. Meyne, K. Knorr, T. Wethkamp, M. Klein, M. Miller, W. Richter, L. Samuelson
"Temperature Dependence of the InP(001) bulk and surface dielectric function"
Applied Physics A 65 (1997) 333
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21
D. Pahlke, J. Kinsky, Ch. Schulz, M. Pristovsek, M. Zorn, N. Esser, and W. Richter
"Structure of InP(001) surfaces prepared by decapping and by ion bombardment and annealing"
Physical Review B 56 (1997) R1661
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20
M. Zorn, T. Trepk, M. Klein, J.-T. Zettler, and W. Richter
"In-situ control of III-V semiconductor growth by optical spectroscopy during MOVPE"
Proc. 7th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, June 1997, Berlin, Germany, G-7
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19
K. Knorr, M. Pristovsek, U. Resch-Esser, N. Esser, M. Zorn, W. Richter
"In situ passivation of III-V semiconductors in MOVPE by amorphous As and P layers"
Journal of Crystal Growth 170 (1997) 230
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18
K. Knorr, A. Rumberg, M. Zorn, C. Meyne, T. Trepk, J.-T. Zettler, and W. Richter
"Real-time monitoring of P-based semiconductor growth by linear-optical spectroscopy"
Proc. 8th Int. Conf. on Indium Phosphide and Related Materials, April 1996, Schwäbisch Gmünd, Germany, WP-C 33, IEEE Catalog #96CH35930
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17
M. Zorn, T. Trepk, J.-T. Zettler, C. Meyne, K. Knorr, Th. Wethkamp, W. Richter, B. Junno, M. Miller, L. Samuelson
"On the temperature dependence of the InP(001) bulk and surface dielectric function"
Proc. 8th Int. Conf. on Indium Phosphide and Related Materials, April 1996, Schwäbisch Gmünd, Germany, WP-C 32, IEEE Catalog #96CH35930
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16
W. Richter, K. Knorr, J.-T. Zettler, M. Zorn
"Real time monitoring of epitaxial growth"
in "Heterostructure Epitaxy and Devices" ed. by J. Novak, A. Schlachetzki, Kluwer Academic Publishers, 1996, p. 11
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15
M. Zorn, J. Jönsson, W. Richter, J.-T. Zettler, and K. Ploska
"Anisotropic Reflectance from Semiconductor Surfaces for in-situ Monitoring in Epitaxial Growth Systems"
physica status solidi (a) 152 (1995) 23-34
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14
J.-T. Zettler, T. Wethkamp, M. Zorn, M. Pristovsek, C. Meyne, K. Ploska, and W. Richter
"Growth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy"
Applied Physics Letters 67 (1995) 3783
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13
K. Ploska, M. Zorn, E. Steimetz, M. Pristovsek, T. Wethkamp, J.-T. Zettler, and W. Richter
"In-situ characterisation of III-V semiconductor surfaces with Reflectance Anisotropy Spectroscopy and Ellipsometry"
Proc. 6th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, June 1995, Gent, Belgium
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12
J.-T. Zettler, W. Richter, K. Ploska, M. Zorn, J. Rumberg, C. Meyne, and M. Pristovsek
"Real Time Diagnostics of Semiconductor Surface Modifications by Reflectance Anisotropy Spectroscopy"
Proc. Int. Workshop on Semiconductor Characterization, Washington, USA, 1995, p. 537, American Institute of Physics
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11
M. Zorn, J. Jönsson, A. Krost, W. Richter, J.-Th. Zettler, K. Ploska, and F. Reinhardt
"In-situ Refletance Anisotropy Studies of Ternary III-V Surfaces and Growth of Heterostructures"
Journal of Crystal Growth 145 (1994) 53
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10
K. Ploska, J.-Th. Zettler, W. Richter, J. Jönsson, F. Reinhardt, J. Rumberg, M. Pristovsek, M. Zorn, D. Westwood, R. H. Williams
"Surface processes before and during growth of GaAs(001)"
Journal of Crystal Growth 145 (1994) 44
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9
P. Kurpas, J. Jönsson, W. Richter, D. Gutsche, M. Pristovsek, M. Zorn
"Efficiency of arsenic and phosphorus precursors investigated by reflectance anisotropy spectroscopy"
Journal of Crystal Growth 145 (1994) 36
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8
M. Zorn
"In-situ Wachstumsuntersuchungen an der MOVPE unter Verwendung der Reflexions-Anisotropie-Spektroskopie"
Diplomarbeit, Technische Universität Berlin, 1994
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7
F. Reinhardt, J. Jönsson, M. Zorn, W. Richter, K. Ploska, J. Rumberg, P. Kurpas
"Monolayer growth oscillations and surface structure of GaAs(001) during MOVPE growth"
J. Vac. Sci. Technol. B 12 (1994) 2541
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6
J. Jönsson, F. Reinhardt, K. Ploska, M. Zorn, W. Richter and J.-Th. Zettler
"Real time monitoring of PH3 and AsH3 induced exchange reactions on GaAs, InGaAs and InP during MOVPE"
Proc. 6th Int. Conf. on Indium Phosphide and Related Materials, St. Barbara, USA, 1994, p. 53
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5
J. Jönsson, F. Reinhardt, M. Zorn, K. Ploska, W. Richter, J. Rumberg
"In situ time resolved monitoring of PH3 induced exchange reactions on GaAs under MOVPE conditions"
Applied Physics Letters 64 (1994) 1998
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4
K. Ploska, W. Richter, F. Reinhardt, J. Jönsson, J. Rumberg, M. Zorn
"Real time control of III-V semiconductor surfaces during MOVPE growth by reflectance anisotropy spectroscopy"
Mat. Res. Soc. Symp. Proc. 334 (1993) 155
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3
K. Ploska, F. Reinhardt, M. Zorn, J. Jönsson, K. C. Rose, W. Richter, P. Kurpas
"GaAs(001) and InP(001) surfaces under MOVPE conditions studied by Reflectance Anisotropy Spectroscopy (RAS)"
Proc. ICFSI-4, Juni 1993, Jülich, Germany, eds. B. Lengeler, H. Lüth, W. Mönch, J. Pollmann, World Scientific Press Singapore, New Jersey, London, Hong Kong 1994
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2
F. Reinhardt, K. Ploska, K. C. Rose, M. Zorn, J. Jönsson, W. Richter, P. Kurpas
"GaAs and InP MOVPE surface growth control by Reflectance Anisotropy Spectroscopy"
Proc. 5th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, June 1993, Malmö, Sweden
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1
F. Reinhardt, W. Richter, A. B. Müller, D. Gutsche, P. Kurpas, K. Ploska, K. C. Rose and M. Zorn
"GaAs surface control during MOVPE by Reflectance Anisotropy Spectroscopy"
J. Vac. Sci. Technol. B 11 (1993) 1427
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