Publications

S. Riecke, S. Schwertfeger, K. Lauritsen, K. Paschke, R. Erdmann, G. Tränkle
"23 W peak power picosecond pulses from a single-stage all-semiconductor master oscillator power amplifier"
Appl. Phys. B, vol. 98, no. 2-3, pp. 295-299 (2010).

E. Richter, U. Zeimer, F. Brunner, S. Hagedorn, M. Weyers, and G. Tränkle
"Boule-like growth of GaN by HVPE"
phys. stat. sol. (c), vol. 7, no. 1, pp. 28-31 (2010).

P. Crump, A. Pietrzak, F./nbsp;Bugge, H. Wenzel, G. Erbert, and G. Tränkle
"975 nm high power diode lasers with high efficiency and narrow vertical far field enabled by low index quantum barriers"
Appl. Phys. Lett., vol. 96, no. 131110 (2010).

W. Pittroff, G. Erbert, B. Eppich, C. Fiebig, K. Vogel, and G. Tränkle
"Conductively Cooled 1 kW-QCW Diode Laser Stacks Enabling Simple Fiber Coupling"
IEEE Trans. Compon. Packag. Technol., vol. 33, no. 1, pp. 206-214 (2010).

C.M. Schultz, P. Crump, H. Wenzel, O. Brox, A. Maaßdorf, G. Erbert, G. Tränkle
"11W broad area 976 nm DFB lasers with 58% power conversion efficiency"
Electron. Lett., vol. 46, no. 8, pp. 580-581 (2010).

R. Pazirandeh, J. Würfl, G. Tränkle
"Determination of GaN HEMT reliability by monitoring IDSS"
Microelectron. Reliab., vol. 50, no. 6, pp. 763-766 (2010).

E. Bahat-Treidel, O. Hilt, F. Brunner, V. Sidorov, J. Würfl, and G. Tränkle
"AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)"
IEEE Trans. Electron Devices, vol. 57, no. 6, pp. 1208-1216 (2010).

S.A. Chevtchenko, F. Brunner, J. Würfl, and G. Tränkle
"Effect of buffer thickness on DC and microwave performance of AlGaN/GaN heterojunction field-effect transistors"
phys. stat. sol. (a), vol. 207, no. 6, pp. 1505-1508 (2010).

C.Y. Lu, E. Bahat-Treidel, O. Hilt, R. Lossy, N. Chaturvedi, E.Y. Chang, J. Würfl, and G. Tränkle
"Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs"
Semicond. Sci. Technol., vol. 25, no. 075005 (2010).

O. Brox, F. Bugge, A. Ginolas, A. Klehr, P. Ressel, H. Wenzel, G. Erbert, and G. Tränkle
"High-power ridge waveguide DFB and DFB-MOPA lasers at 1064 nm with a vertical farfield angle of 15°"
Proc. SPIE, vol. 7616, no. 7616O (2010).

A. Klehr, B. Sumpf, K.H. Hasler, J. Fricke, A. Liero, Th. Hoffmann, G. Erbert, and G. Tränkle
"High peak power pulse generation with GHz repetition rate using a Q-switched 1060nm DBR tapered laser"
Proc. SPIE, vol. 7616, no. 7616J (2010).

B. Sumpf, P. Adamiec, J. Fricke, P. Ressel, H. Wenzel, G. Erbert, and G. Tränkle
"Comparison of 650 nm tapered lasers with different lateral geometries at output powers up to 1 W"
Proc. SPIE, vol. 7616, no. 7616H (2010).

X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C.M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Tränkle
"Root-Cause Analysis of Peak Power Saturation in Pulse-Pumped 1100 nm Broad Area Single Emitter Diode Lasers"
IEEE J. Quantum Electron., vol. 46, no. 5, pp. 658-665 (2010).

P. Crump, H. Wenzel, P. Ressel, G. Erbert and G. Tränkle
"Multiple vertical mode high power 975 nm diode lasers restricted to single vertical mode operation through use of optical facet coatings"
Electron. Lett., vol. 45, no. 1, pp. 51-53 (2009).

M. Maiwald, D. Jedrzejczyk, A. Sahm, K. Paschke, R. Güther, B. Sumpf, G. Erbert, and G. Tränkle
"Second-harmonic-generation microsystem light source at 488 nm for Raman spectroscopy"
Opt. Lett., vol. 34, no. 2, pp. 217-219 (2009).

A. Pietrzak, P. Crump, H. Wenzel, R. Staske, G. Erbert and G. Tränkle
"55 W peak power from 1100 nm wavelength 60 µm broad-area laser diodes enabled by reduced carrier accumulation in the waveguide"
Semicond. Sci. Technol., vol. 24, no. 035020 (2009).

X. Wang, P. Crump, A. Pietrzak, C. Schultz, A. Klehr, T. Hoffmann, A. Liero, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Tränkle
"Assessment of the limits to peak power of 1100nm broad area single emitter diode lasers under short pulse conditions"
Proc. SPIE, vol. 7198, no. 71981G (2009).

P. Adamiec, B. Sumpf, D. Feise, K.-H. Hasler, P. Ressel, H. Wenzel, M. Zorn, M. Weyers, G. Erbert, and G. Tränkle
"Twin-Contact 645-nm Tapered Laser With 500-mW Output Power"
IEEE Photonics Technol. Lett., vol. 21, no. 4, pp. 236-238 (2009).

M. Rudolph, N. Chaturvedi, K. Hirche, J. Würfl, W. Heinrich, and G. Tränkle
"Highly Rugged 30 GHz GaN Low-Noise Amplifiers"
IEEE Microwave Wireless Compon. Lett., vol. 19, no. 4, pp. 251-253 (2009).

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, J. Fricke, P. Ressel, H. Wenzel, G. Erbert, G. Tränkle
"1060 nm DBR tapered lasers with 12 W output power and a nearly diffraction limited beam quality"
Proc. SPIE, vol. 7230, no. 72301E (2009).

M. Maiwald, H. Schmidt, B. Sumpf, G. Erbert, H.-D. Kronfeldt, and G. Tränkle
"Microsystem 671 nm light source for shifted excitation Raman difference spectroscopy"
Appl. Opt., vol. 48, no. 15, pp. 2789-2792 (2009).

A. Pietrzak, P. Crump, F. Bugge, H. Wenzel, G. Erbert and G. Tränkle
"1060-nm Multi Quantum Well Diode Lasers With Narrow Vertical Divergence Angle of 8° and High Internal Efficiency"
Conf. Dig. CLEO/IQEC 2009, Paper CWF2 (2009).

T. Kettler, K. Posilovic, L.Ya. Karachinsky, P. Ressel, A. Ginolas, J. Fricke, U.W. Pohl, V.A. Shchukin, N.N. Ledentsov, D. Bimberg, J. Jönsson, M. Weyers, G. Erbert, and G. Tränkle
"High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays"
IEEE J. Sel. Top. Quantum Electron., vol. 15, no. 3, pp. 901-908 (2009).

A.I. Bawamia, B. Eppich, K. Paschke, H. Wenzel, F. Schnieder, G. Erbert, G. Tränkle
"Experimental determination of the thermal lens parameters in a broad area semiconductor laser amplifier"
Appl. Phys. B, vol. 97, no. 1, pp. 95-101 (2009).

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Fricke, H. Wenzel, M. Zorn, G. Erbert, and G. Tränkle
"High-Brightness Quantum Well Tapered Lasers"
IEEE J. Sel. Top. Quantum Electron., vol. 15, no. 3, pp. 1009-1020 (2009).

C.-S. Friedrich, C. Brenner, S. Hoffmann, T. Schlauch, A. Klehr, G. Erbert, G. Tränkle, C. Jördens, M. Salhi, M. Koch, and M.R. Hofmann
"THz sources and detectors based on diode lasers"
Proc. SPIE, vol. 7197, no. 71970B (2009).

A. Klehr, H. Wenzel, O. Brox, F. Bugge, G. Erbert, T-P. Nguyen and G. Tränkle
"High power DFB lasers for D1 and D2 rubidium absorption spectroscopy and atomic clocks"
Proc. SPIE, vol. 7230, no. 72301I (2009).

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, J. Fricke, H. Wenzel, G. Erbert, G. Tränkle
"12.2 W output power from 1060 nm DBR tapered lasers with narrow spectral line width and nearly diffraction limited beam quality"
Conf. Dig. CLEO/Europe 2009, Paper CB-12.3-THU (2009).

A. Klehr, A. Liero, T. Hoffann, S. Schwertfeger, G. Erbert, W. Heinrich and G. Tränkle
"A new concept of an ultra fast pulse picker for fs- and ps-pulses from GHz pulse-trains with semiconductor tapered elements"
Conf. Dig. CLEO/Europe 2009, Paper CB-14.1-FRI (2009).

T-P. Nguyen, A. Klehr, A. Wicht, G. Erbert, and G. Tränkle
"High-power distributed feedback diode laser at 780 nm with sub-100 kHz linewidth"
Conf. Dig. CLEO/Europe 2009, Paper CB-12.2-THU (2009).

S. Riecke, T. Eckhardt, S. Schwertfeger, A. Klehr, H. Wenzel, G. Tränkle
"Temperature Dependence of Picosecond Pulse Spectra of a DFB Laser"
Conf. Dig. CLEO/Europe 2009, Paper CB-14.5-FRI (2009).

V. Tronciu, M. Lichtner, M. Radziunas, U. Bandelow, H. Wenzel, A. Klehr, H. Wenzel, G. Tränkle
"Calculation of improved features of distributed-feedback tapered master-oscillator power-amplifiers"
Conf. Dig. CLEO/Europe 2009, Paper CB-P.30-TUE (2009).

A.I. Bawamia, B. Eppich, K. Paschke, H. Wenzel, G. Erbert, G. Tränkle
"Determination of the thermal lensing in a broad area semiconductor laser amplifier"
Conf. Dig. CLEO/Europe 2009, Paper CB-P.17-TUE (2009).

M. Rudolph, M. Dewitz, A. Liero, I. Khalil, N. Chaturvedi, C. Wipf, R.M. Bertenburg, J. Miller, J. Würfl, W. Heinrich, G. Tränkle
"Highly Robust X-Band LNA with Extremely Short Recovery Time"
IEEE MTT-S Int. Microwave Symp. Dig., pp. 781-784 (2009).

B. Sumpf, H. Schmidt, M. Maiwald, A. Müller, G. Erbert, H.-D. Kronfeldt, G. Tränkle
"Microsystem technology based diode lasers and Raman sensors for in situ food quality control"
Proc. SPIE, vol. 7315, no. 731508 (2009).

P. Adamiec, B. Sumpf, I. Rüdiger, J. Fricke, K.-H. Hasler, P. Ressel, H. Wenzel, M. Zorn, G. Erbert, and G. Tränkle
"Tapered lasers emitting at 650 nm with 1 W output power with nearly diffraction-limited beam quality"
Opt. Lett., vol. 34, no. 16, pp. 2456-2458 (2009).

E. Bahat-Treidel, R. Lossy, J. Würfl, and G. Tränkle
"AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode"
IEEE Electron Device Lett., vol. 30, no. 9, pp. 901-903 (2009).

E. Bahat-Treidel, O. Hilt, F. Brunner, J. Würfl, and G. Tränkle
"Punch-through voltage enhancement scaling of AlGaN/GaN HEMTs using AlGaN double heterojunction confinement"
phys. stat. sol. (c), vol. 6, no. 6, pp. 1373-1377 (2009).

E. Bahat-Treidel, O. Hilt, F. Brunner, J. Würfl, and G. Tränkle
"Engineered linearity of GaN-based HEMTs power devices by tailoring transfer characteristics"
phys. stat. sol. (c), vol. 6, no. 6, pp. 1378-1381 (2009).

T. Krämer, M. Rudolph, F.J. Schmückle, J. Würfl, and G. Tränkle
"InP DHBT Process in Transferred-Substrate Technology With f_t and f_max Over 400 GHz"
IEEE Trans. Electron Devices , vol. 56, no. 9, pp. 1897-1903 (2009).

T. Krämer, C. Meliani, F.J. Schmückle, J. Würfl, and G. Tränkle
"Traveling-Wave Amplifiers in Transferred Substrate InP-HBT Technology"
IEEE Trans. Microwave Theory Tech., vol. 57, no. 9, pp. 2114-2121 (2009).

P. Crump, H. Wenzel, G. Erbert, and G. Tränkle
"Advances in spatial and spectral brightness in 800-1100 nm GaAs-based high power broad area lasers"
Proc. SPIE, vol. 7483, no. 74830B (2009).

A. Glowacki, P. Laskowski, C. Boit, P. Ivo, E. Bahat-Treidel, R. Pazirandeh, R. Lossy, J. Würfl, G. Tränkle
"Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures"
Microelectron. Reliab., vol. 49, no. 9-11, pp. 1211-1215 (2009).

K. Häusler, U. Zeimer, B. Sumpf, F. Bugge, P. Ressel, G. Erbert, and G. Tränkle
"Reliability of diode lasers for space applications"
Proc. SPIE, vol. 7198, no. 719816 (2009).

M. Maiwald, H. Schmidt, B. Sumpf, R. Güther, G. Erbert, H.-D. Kronfeldt, G. Tränkle
"Microsystem Light Source at 488 nm for Shifted Excitation Resonance Raman Difference Spectroscopy"
Appl. Spectrosc., vol. 63, no. 11, pp. 1283-1287 (2009).

S. Riecke, S. Schwertfeger, H. Wenzel, G. Tränkle
"Temperature Dependence of Picosecond Pulse Performance of a DFB Laser"
Proc. iNOW 2009 Stockholm/Berlin (2009).

X. Wang, P. Crump, A. Pietrzak, C. Schultz, A. Klehr, T. Hoffmann, A. Liero, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert and G. Tränkle
"Assessment of the Limits to Peak Power of 1100nm Broad Area Single Emitter Diode Lasers under Short Pulse Conditions"
Proc. iNOW 2009 Stockholm/Berlin (2009).

K. Paschke, G. Blume, C. Fiebig, A. Sahm, D. Feise, M. Uebernickel, G. Erbert, G. Tränkle
"Compact Watt-class visible light sources using direct frequency-doubled edge-emitting diode lasers"
Proc. SPIE, vol. 7193, no. 71931C (2009).

S. Hagedorn, E. Richter, C. Netzel, U. Zeimer, M. Weyers, and G. Tränkle
"HVPE growth of Al_xGa_1-xN alloy layers"
phys. stat. sol. (c), vol. 6, no. S2, pp. S309-S312 (2009).

P. Ivo, A. Glowacki, R. Pazirandeh, E. Bahat-Treidel, R. Lossy, J. Würfl, C. Boit, G. Tränkle
"Influence of GaN cap on robustness of AlGaN/GaN HEMTs"
Proc. Int. Reliability Physics Symposium 2009 (IEEE), pp. 71-75 (2009).

B. Sumpf, M. Zorn, R. Staske, J. Fricke, A. Ginolas, K. Häusler, W. Pittroff, P. Ressel, G. Erbert, M. Weyers, G. Tränkle
"650 nm InGaP broad area lasers with 5000 h reliable operation at 600 mW"
IEEE Photonics Technology Letters, vol. 19, 118-120, 2007.

F. Dittmar, B. Sumpf, G. Erbert and G. Tränkle
"Long-term reliability studies of high-power 808 nm tapered diode lasers with stable beam quality"
Semicond. Sci. Technol. 22 (2007) 374-379.

M. Rudolph, R. Behtash, R. Doerner, K. Hirche, J. Würfl, W. Heinrich, G. Tränkle
"Analysis and Optimization of Highly Survivable GaN Low-Noise Amplifiers"
IEEE Trans. Microwave Theory Tech., vol.55, 37 - 43 Jan. 2007.

B. Sumpf, G. Erbert, J. Fricke, P. Froese, R. Häring, W.G. Kaenders, A. Klehr, F. Lison, P. Ressel, H. Wenzel, M. Weyers, M. Zorn, G. Tränkle
"670 nm tapered lasers and amplifiers with output powers P > 1 W and nearly diffraction limited beam quality"
Proc. of SPIE Vol. 6485 (2007) 648517.

Ch. Hennig, E. Richter, M. Weyers, and G. Tränkle
"Self-separation of thick two inch GaN layers grown by HVPE on sapphire using epitaxial lateral overgrowth with masks containing tungsten"
phys. stat. sol. (c) 4, No. 7, 2638-2641 (2007).

E. Richter, Ch. Hennig, L. Wang, U. Zeimer, M. Weyers, and G. Tränkle
"Optimization of HVPE growth of freestanding c-plane GaN layers using (100) γ-LiAlO₂ substrates"
phys. stat. sol. (c) 4, No. 7, 2277-2280 (2007).

R. Häring, B. Sumpf, G. Erbert, G. Tränkle, F. Lison, W.G. Kaenders
"670 nm semiconductor lasers for Lithium spectroscopy with 1 W"
Proc. SPIE 6485, 648516 (2007).

C. Fiebig, G. Erbert, W. Pittroff, H. Wenzel, A. Maaßdorf, S. Einfeldt, and G. Tränkle
"High-power, high-brightness 100W QCW diode laser at 940nm"
Proc. SPIE 6456, 64560K (2007).

B. Sumpf, M. Zorn, M. Maiwald, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, G. Tränkle
"5.5 W output power from 100 µm stripe width lasers at 670 nm with a vertical far-field angle of 32 degrees"
Conference Digest CLEO/Europe 2007, Paper CB14-4.

T.-P. Nguyen, A. Klehr, O. Brox, G. Erbert, and G. Tränkle
"200 kHz linewidth of 780 nm high-power distributed feedback diode laser"
Conference Digest CLEO/Europe 2007, Paper CB-6-WED.

S. Schwertfeger, A. Klehr, J. Fricke, G. Erbert, and G. Tränkle
"High power pulse generation from a 10mm long monolithic multi section mode locked semiconductor laser at 920nm"
Conference Digest CLEO/Europe 2007, Paper CB-7-WED.

O. Krüger, G. Schöne, T. Wernicke, W. John, J. Würfl, and G. Tränkle
"UV laser drilling of SiC for semiconductor device fabrication"
Journal of Physics: Conference Series 59 (2007) 740-744.

T. Wernicke, O. Krüger, M. Herms, J. Würfl, H. Kirmse, W. Neumann, T. Behm, G. Irmer, G. Tränkle
"Analysis of materials modifications caused by UV laser micro drilling of via holes in AlGaN/GaN transistors on SiC"
Applied Surface Science 253 (2007) 8008-8014.

A. Klehr, H. Wenzel, O. Brox, F. Bugge, G. Erbert, T-P. Nguyen, and G. Tränkle
"High-power 894 nm monolithic distributed-feedback laser"
Optics Express, vol. 15, no. 18, pp. 11364-11369, 2007.

F. Bugge, U. Zeimer, H. Wenzel, R. Staske, B. Sumpf, G. Erbert, M. Weyers and G. Tränkle
"Laser Diodes with highly strained InGaAs MQWs and very narrow far fields"
phys. stat. sol. (c)3, 3 (2006) 423-426.

A. Klehr, F. Bugge, G. Erbert, J. Fricke, A. Knauer, P. Ressel, H. Wenzel, G. Tränkle
"High power broad area 808 nm DFB lasers for pumping solid state lasers"
Proceedings SPIE, vol. 6133, "Novel In-Plane Semiconductor Lasers V", 96-105 (2006).

M. Maiwald, S. Schwertfeger, R. Güther, B. Sumpf, K. Paschke, C. Dzionk, G. Erbert, and G. Tränkle
"600 mW optical output power at 488 nm by use of a high-power hybrid laser diode system and a periodically poled MgO:LiNbO₃ bulk crystal"
Optics Letters, Vol. 31, No. 6, March 15, pp. 802-804, 200.

F. Dittmar, B. Sumpf, J. Fricke, G. Erbert, and G. Tränkle
"High-power 808-nm tapered diode lasers with nearly diffraction-limited beam quality of M² = 1.9 at P = 4.4 W"
IEEE Phot. Techn. Lett. 18, pp. 601-603 (2006).

S. Schwertfeger, J. Wiedmann, B. Sumpf, A. Klehr, F. Dittmar, A. Knauer, G. Erbert and G. Tränkle
"7.4 W continuous-wave output power of master oscillator power amplifier system at 1083 nm"
Electronics Letters, Vol. 42, No. 6, 346-347 (2006).

B. Sumpf, M. Zorn, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, G. Tränkle
"High-efficient 650 nm laser bars with an output power of about 10 W and a wall-plug efficiency of 30%"
Proceedings SPIE, vol. 6133, "Novel In-Plane Semiconductor Lasers V", 78-85 (2006).

M. Rudolph, R. Behtash, K. Hirche, J. Würfl, W. Heinrich, G. Tränkle
"A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier"
IEEE MTT-S Int. Microwave Symp. Dig., 2006, 1899 - 1902.

Prof. Dr. Günther Tränkle

Phone

+49.30.6392-2601

Fax

+49.30.6392-2602

Email

guenther.traenkle@fbh-berlin.de