Publications

K.-H. Hasler, B. Sumpf, P. Adamiec, J. Fricke, H. Wenzel, G. Erbert, G. Tränkle
"Improving the modulation efficiency of high-power distributed Bragg reflector tapered diode lasers"
Appl. Phys. B, vol. 102, no. 1, pp. 43-47 (2011).

V. Hoffmann, A. Knauer, F. Brunner, S. Einfeldt, M. Weyers, G. Tränkle, K. Haberland, J.-T. Zettler, M. Kneissl
"Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate"
J. Cryst. Growth, vol. 315, no. 1, pp. 5-9 (2011).

P. Ivo, A. Glowacki, E. Bahat-Treidel, R. Lossy, J. Würfl, C. Boit, G. Tränkle
"Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements"
Microelectron. Reliab., vol. 51, no. 2, pp. 217-223 (2011).

E. Richter, M. Gründer, B. Schineller, F. Brunner, U. Zeimer, C. Netzel, M. Weyers, and G. Tränkle
"GaN boules grown by high rate HVPE"
phys. stat. sol. (c), vol. 8, no. 5, pp. 1450-1454 (2011).

S. Spießberger, M. Schiemangk, A. Sahm, A. Wicht, H. Wenzel, A. Peters, G. Erbert, and G. Tränkle
"Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz"
Opt. Express, vol. 19, no. 8, pp. 7077-7083 (2011).

A. Pietrzak, P. Crump, H. Wenzel, G. Erbert, F. Bugge, and G. Tränkle
"Combination of Low-Index Quantum Barrier and Super Large Optical Cavity Designs for Ultranarrow Vertical Far-Fields From High-Power Broad-Area Lasers"
IEEE J. Sel. Top. Quantum Electron., first view (2011).

P. Ivo, U. Zeimer, P. Kotara, E. Cho, L. Schellhase, E. Bahat-Treidel, J. Würfl, G. Tränkle, A. Glowacki, and C. Boit
"Degradation Mechanism of GaN HEMTs in Dependence on Buffer Quality and Gate Technology"
Reliability Of Compound Semiconductors Workshop (ROCS 2011), Palm Springs, USA, May 16 (2011).

A. Klehr, A. Liero, Th. Hoffmann, S. Schwertfeger, H. Wenzel, G. Erbert, W. Heinrich and G. Tränkle
"Compact ps-pulse laser source with free adjustable repetition rate and nJ pulse energy on microbench"
Proc. SPIE, vol. 7953, no. 79531D (2011).

T. Schlauch, J.C. Balzer, M.R. Hofmann, A. Klehr, G. Erbert, G. Tränkle
"Passively mode-locked two section laser diode with intracavity dispersion control"
Proc. SPIE, vol. 7937, no. 79370S (2011).

A. Sahm, M. Uebernickel, C. Fiebig, K. Paschke, G. Erbert, G. Tränkle
"Thermal Optimization of the Second Harmonic Generation with Tapered Diode Lasers"
Proc. SPIE, vol. 7917, no. 791708 (2011).

B. Sumpf, P. Adamiec, M. Zorn, H. Wenzel, G. Erbert, G. Tränkle
"670 nm nearly diffraction limited tapered lasers with more than 30% conversion efficiency and 1 W cw and 3 W pulsed output power"
Proc. SPIE, vol. 7953, no. 79530Z (2011).

E. Bahat-Treidel, O. Hilt, R. Zhytnytska, E. Cho, J. Würfl and G. Tränkle
"GaN-based Schottky diodes with low onset voltage and strong reverse blocking"
38th Int. Symp. on Compound Semiconductors (ISCS), Berlin, Germany, May 22-26, pp. 246-247 (2011).

E. Bahat-Treidel, O. Hilt, R. Zhytnytska, E. Cho, J. Würfl and G. Tränkle
"AlGaN/GaN/GaN:C back-barrier Schottky diodes for power switching"
35rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Catania, Italy, May 29 - Jun 1, ISBN 978-88-8080-123-8, pp. 165-166 (2011).

S. Spießberger, M. Schiemangk, A. Sahm, A. Wicht, H. Wenzel, G. Erbert, and G. Tränkle
"Narrow-Linewidth High-Power Semiconductor-based Laser Module"
European Conf. on Lasers and Electro-Optics and the European Quantum Electronics Conf. (CLEO Europe - EQEC 2011), Munich, Germany, May 22-26, paper CB-P10-THU (2011).

A. Klehr, A. Liero, T. Hoffmann, S. Schwertfeger, H. Wenzel, G. Erbert, W. Heinrich and G. Tränkle
"Compact 1064 nm ps-light source on a micro bench with free adjustable repetition rate and nJ pulse energy"
European Conf. on Lasers and Electro-Optics and the European Quantum Electronics Conf. (CLEO Europe - EQEC 2011), Munich, Germany, May 22-26, paper CB7.6-WED (2011).

E. Luvsandamdin, G. Mura, A. Wicht, A. Sahm, G. Erbert and G. Tränkle
"Hybrid-integrated ECDL for precision Rubidium spectroscopy in space"
European Conf. on Lasers and Electro-Optics and the European Quantum Electronics Conf. (CLEO Europe - EQEC 2011), Munich, Germany, May 22-26, paper CB-P12-THU (2011).

D. Grosse, T. Schlauch, J.C. Balzer, A. Klehr, G. Erbert, G. Tränkle and M.R. Hofmann
"Colliding pulse mode-locked lasers as light sources for single-shot holography"
Semiconductor and Integrated Optoelectronics (SIOE) conference, Cardiff, Wales, United Kingdom, Apr. 18-21 (2011).

D. Grosse, N. Koukourakis, N.C. Gerhardt, T. Schlauch, J.C. Balzer, A. Klehr, G. Erbert, G. Tränkle and M.R. Hofmann
"Colliding pulse mode-locked lasers as light sources for single-shot holography"
Applications of Optics and Photonics (AOP) international conference, Braga, Portugal, May 3-7 (2011).

S. Spießberger, M. Schiemangk, A. Wicht, H. Wenzel, G. Erbert, G. Tränkle
"DBR laser diodes emitting near 1064 nm with a narrow intrinsic linewidth of 2 kHz"
Appl. Phys. B, vol. 104, no. 4, pp. 813-818 (2011).

S. Spießberger, M. Schiemangk, A. Sahm, A. Wicht, H. Wenzel, G. Erbert, and G. Tränkle
"1W narrow linewidth semiconductor based laser module emitting near 1064 nm for the use in coherent optical communication in space"
Int. Conf. on Space Optical Systems and Applications (ICSOS 2011), Santa Monica, USA, May 11-13, pp. 324-326 (2011).

E. Luvsandamdin, G. Mura, A. Wicht, A. Sahm, S. Spießberger, H. Wenzel, G. Erbert and G. Tränkle
"Micro-integrated ECDLs for precision spectroscopy in space"
Int. Conf. on Space Optical Systems and Applications (ICSOS 2011), Santa Monica, USA, May 11-13, pp. 383-385 (2011).

B. Sumpf, J. Fricke, P. Ressel, M. Zorn, G. Erbert and G. Tränkle
"20 000 h reliable operation of 100 µm stripe width 650 nm broad area lasers at more than 1.1 W output power"
Semicond. Sci. Technol., vol. 26, no. 105011 (2011).

P. Kotara, O. Hilt, H. Kirmse, J. Würfl, W. Neumann, and G. Tränkle
"Electrical and EDX-analysis of CF4 and Ar plasma treated AlGaN/GaN HEMTs"
phys. stat. sol. (c), vol. 8, no. 7-8, pp. 2207-2209 (2011).

A. Sahm, M. Uebernickel, K. Paschke, G. Erbert, and G. Tränkle
"Thermal optimization of second harmonic generation at high pump powers"
Opt. Express, vol. 19, no. 23, pp. 23029-23035 (2011).

S. Riecke, S. Schwertfeger, K. Lauritsen, K. Paschke, R. Erdmann, G. Tränkle
"23 W peak power picosecond pulses from a single-stage all-semiconductor master oscillator power amplifier"
Appl. Phys. B, vol. 98, no. 2-3, pp. 295-299 (2010).

E. Richter, U. Zeimer, F. Brunner, S. Hagedorn, M. Weyers, and G. Tränkle
"Boule-like growth of GaN by HVPE"
phys. stat. sol. (c), vol. 7, no. 1, pp. 28-31 (2010).

P. Crump, A. Pietrzak, F./nbsp;Bugge, H. Wenzel, G. Erbert, and G. Tränkle
"975 nm high power diode lasers with high efficiency and narrow vertical far field enabled by low index quantum barriers"
Appl. Phys. Lett., vol. 96, no. 131110 (2010).

W. Pittroff, G. Erbert, B. Eppich, C. Fiebig, K. Vogel, and G. Tränkle
"Conductively Cooled 1 kW-QCW Diode Laser Stacks Enabling Simple Fiber Coupling"
IEEE Trans. Compon. Packag. Technol., vol. 33, no. 1, pp. 206-214 (2010).

C.M. Schultz, P. Crump, H. Wenzel, O. Brox, A. Maaßdorf, G. Erbert, G. Tränkle
"11W broad area 976 nm DFB lasers with 58% power conversion efficiency"
Electron. Lett., vol. 46, no. 8, pp. 580-581 (2010).

R. Pazirandeh, J. Würfl, G. Tränkle
"Determination of GaN HEMT reliability by monitoring IDSS"
Microelectron. Reliab., vol. 50, no. 6, pp. 763-766 (2010).

E. Bahat-Treidel, O. Hilt, F. Brunner, V. Sidorov, J. Würfl, and G. Tränkle
"AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs)"
IEEE Trans. Electron Devices, vol. 57, no. 6, pp. 1208-1216 (2010).

S.A. Chevtchenko, F. Brunner, J. Würfl, and G. Tränkle
"Effect of buffer thickness on DC and microwave performance of AlGaN/GaN heterojunction field-effect transistors"
phys. stat. sol. (a), vol. 207, no. 6, pp. 1505-1508 (2010).

C.Y. Lu, E. Bahat-Treidel, O. Hilt, R. Lossy, N. Chaturvedi, E.Y. Chang, J. Würfl, and G. Tränkle
"Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs"
Semicond. Sci. Technol., vol. 25, no. 075005 (2010).

O. Brox, F. Bugge, A. Ginolas, A. Klehr, P. Ressel, H. Wenzel, G. Erbert, and G. Tränkle
"High-power ridge waveguide DFB and DFB-MOPA lasers at 1064 nm with a vertical farfield angle of 15°"
Proc. SPIE, vol. 7616, no. 7616O (2010).

A. Klehr, B. Sumpf, K.H. Hasler, J. Fricke, A. Liero, Th. Hoffmann, G. Erbert, and G. Tränkle
"High peak power pulse generation with GHz repetition rate using a Q-switched 1060nm DBR tapered laser"
Proc. SPIE, vol. 7616, no. 7616J (2010).

B. Sumpf, P. Adamiec, J. Fricke, P. Ressel, H. Wenzel, G. Erbert, and G. Tränkle
"Comparison of 650 nm tapered lasers with different lateral geometries at output powers up to 1 W"
Proc. SPIE, vol. 7616, no. 7616H (2010).

X. Wang, P. Crump, H. Wenzel, A. Liero, T. Hoffmann, A. Pietrzak, C.M. Schultz, A. Klehr, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Tränkle
"Root-Cause Analysis of Peak Power Saturation in Pulse-Pumped 1100 nm Broad Area Single Emitter Diode Lasers"
IEEE J. Quantum Electron., vol. 46, no. 5, pp. 658-665 (2010).

A. Pietrzak, P. Crump, H. Wenzel, F. Bugge, G. Erbert, and G. Tränkle
"High Power 1060 nm Ridge Waveguide Lasers with Low-Index Quantum Barriers for Narrow Divergence Angle"
Conf. Dig. CLEO/QELS 2010, paper CWE2 (2010).

C.M. Schultz, P. Crump, H. Wenzel, O. Brox, A. Maaßdorf, G. Erbert and G. Tränkle
"11W Broad Area 976nm DFB Lasers with 58% Efficiency"
Conf. Dig. CLEO/QELS 2010, paper CWE1 (2010).

H. Wenzel, P. Crump, A. Pietrzak, X. Wang, G. Erbert and G. Tränkle
"Theoretical and experimental investigations of the limits to the maximum output power of laser diodes"
New J. Phys., vol. 12, no. 085007 (2010).

E. Richter, U. Zeimer, S. Hagedorn, M. Wagner, F. Brunner, M. Weyers, G. Tränkle
"Hydride vapor phase epitaxy of GaN boules using high growth rates"
J. Cryst. Growth, vol. 312, no. 18, pp. 2537-2541 (2010).

V. Hoffmann, C. Netzel, U. Zeimer, A. Knauer, S. Einfeldt, F. Bertram, J. Christen, M. Weyers, G. Tränkle, M. Kneissl
"Well width study of InGaN multiple quantum wells for blue-green emitter"
J. Cryst. Growth, vol. 312, no. 23, pp. 3428-3433 (2010).

E. Bahat-Treidel, F. Brunner, O. Hilt, E. Cho, J. Würfl, and G. Tränkle
"AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low R_ON × A"
IEEE Trans. Electron Devices, vol. 57, no. 11, pp. 3050-3058 (2010).

T. Schlauch, J.C. Balzer, A. Klehr, G. Erbert, G. Tränkle, and M.R. Hofmann
"Femtosecond passively modelocked diode laser with intracavity dispersion management"
Opt. Express, vol. 18, no. 23, pp. 24316-24324 (2010).

P. Crump, H. Wenzel, P. Ressel, G. Erbert and G. Tränkle
"Multiple vertical mode high power 975 nm diode lasers restricted to single vertical mode operation through use of optical facet coatings"
Electron. Lett., vol. 45, no. 1, pp. 51-53 (2009).

M. Maiwald, D. Jedrzejczyk, A. Sahm, K. Paschke, R. Güther, B. Sumpf, G. Erbert, and G. Tränkle
"Second-harmonic-generation microsystem light source at 488 nm for Raman spectroscopy"
Opt. Lett., vol. 34, no. 2, pp. 217-219 (2009).

A. Pietrzak, P. Crump, H. Wenzel, R. Staske, G. Erbert and G. Tränkle
"55 W peak power from 1100 nm wavelength 60 µm broad-area laser diodes enabled by reduced carrier accumulation in the waveguide"
Semicond. Sci. Technol., vol. 24, no. 035020 (2009).

X. Wang, P. Crump, A. Pietrzak, C. Schultz, A. Klehr, T. Hoffmann, A. Liero, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert, and G. Tränkle
"Assessment of the limits to peak power of 1100nm broad area single emitter diode lasers under short pulse conditions"
Proc. SPIE, vol. 7198, no. 71981G (2009).

P. Adamiec, B. Sumpf, D. Feise, K.-H. Hasler, P. Ressel, H. Wenzel, M. Zorn, M. Weyers, G. Erbert, and G. Tränkle
"Twin-Contact 645-nm Tapered Laser With 500-mW Output Power"
IEEE Photonics Technol. Lett., vol. 21, no. 4, pp. 236-238 (2009).

M. Rudolph, N. Chaturvedi, K. Hirche, J. Würfl, W. Heinrich, and G. Tränkle
"Highly Rugged 30 GHz GaN Low-Noise Amplifiers"
IEEE Microwave Wireless Compon. Lett., vol. 19, no. 4, pp. 251-253 (2009).

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, J. Fricke, P. Ressel, H. Wenzel, G. Erbert, G. Tränkle
"1060 nm DBR tapered lasers with 12 W output power and a nearly diffraction limited beam quality"
Proc. SPIE, vol. 7230, no. 72301E (2009).

M. Maiwald, H. Schmidt, B. Sumpf, G. Erbert, H.-D. Kronfeldt, and G. Tränkle
"Microsystem 671 nm light source for shifted excitation Raman difference spectroscopy"
Appl. Opt., vol. 48, no. 15, pp. 2789-2792 (2009).

A. Pietrzak, P. Crump, F. Bugge, H. Wenzel, G. Erbert and G. Tränkle
"1060-nm Multi Quantum Well Diode Lasers With Narrow Vertical Divergence Angle of 8° and High Internal Efficiency"
Conf. Dig. CLEO/IQEC 2009, Paper CWF2 (2009).

T. Kettler, K. Posilovic, L.Ya. Karachinsky, P. Ressel, A. Ginolas, J. Fricke, U.W. Pohl, V.A. Shchukin, N.N. Ledentsov, D. Bimberg, J. Jönsson, M. Weyers, G. Erbert, and G. Tränkle
"High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays"
IEEE J. Sel. Top. Quantum Electron., vol. 15, no. 3, pp. 901-908 (2009).

A.I. Bawamia, B. Eppich, K. Paschke, H. Wenzel, F. Schnieder, G. Erbert, G. Tränkle
"Experimental determination of the thermal lens parameters in a broad area semiconductor laser amplifier"
Appl. Phys. B, vol. 97, no. 1, pp. 95-101 (2009).

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, F. Dittmar, J. Fricke, H. Wenzel, M. Zorn, G. Erbert, and G. Tränkle
"High-Brightness Quantum Well Tapered Lasers"
IEEE J. Sel. Top. Quantum Electron., vol. 15, no. 3, pp. 1009-1020 (2009).

C.-S. Friedrich, C. Brenner, S. Hoffmann, T. Schlauch, A. Klehr, G. Erbert, G. Tränkle, C. Jördens, M. Salhi, M. Koch, and M.R. Hofmann
"THz sources and detectors based on diode lasers"
Proc. SPIE, vol. 7197, no. 71970B (2009).

A. Klehr, H. Wenzel, O. Brox, F. Bugge, G. Erbert, T-P. Nguyen and G. Tränkle
"High power DFB lasers for D1 and D2 rubidium absorption spectroscopy and atomic clocks"
Proc. SPIE, vol. 7230, no. 72301I (2009).

B. Sumpf, K.-H. Hasler, P. Adamiec, F. Bugge, J. Fricke, H. Wenzel, G. Erbert, G. Tränkle
"12.2 W output power from 1060 nm DBR tapered lasers with narrow spectral line width and nearly diffraction limited beam quality"
Conf. Dig. CLEO/Europe 2009, Paper CB-12.3-THU (2009).

A. Klehr, A. Liero, T. Hoffann, S. Schwertfeger, G. Erbert, W. Heinrich and G. Tränkle
"A new concept of an ultra fast pulse picker for fs- and ps-pulses from GHz pulse-trains with semiconductor tapered elements"
Conf. Dig. CLEO/Europe 2009, Paper CB-14.1-FRI (2009).

T-P. Nguyen, A. Klehr, A. Wicht, G. Erbert, and G. Tränkle
"High-power distributed feedback diode laser at 780 nm with sub-100 kHz linewidth"
Conf. Dig. CLEO/Europe 2009, Paper CB-12.2-THU (2009).

S. Riecke, T. Eckhardt, S. Schwertfeger, A. Klehr, H. Wenzel, G. Tränkle
"Temperature Dependence of Picosecond Pulse Spectra of a DFB Laser"
Conf. Dig. CLEO/Europe 2009, Paper CB-14.5-FRI (2009).

V. Tronciu, M. Lichtner, M. Radziunas, U. Bandelow, H. Wenzel, A. Klehr, H. Wenzel, G. Tränkle
"Calculation of improved features of distributed-feedback tapered master-oscillator power-amplifiers"
Conf. Dig. CLEO/Europe 2009, Paper CB-P.30-TUE (2009).

A.I. Bawamia, B. Eppich, K. Paschke, H. Wenzel, G. Erbert, G. Tränkle
"Determination of the thermal lensing in a broad area semiconductor laser amplifier"
Conf. Dig. CLEO/Europe 2009, Paper CB-P.17-TUE (2009).

M. Rudolph, M. Dewitz, A. Liero, I. Khalil, N. Chaturvedi, C. Wipf, R.M. Bertenburg, J. Miller, J. Würfl, W. Heinrich, G. Tränkle
"Highly Robust X-Band LNA with Extremely Short Recovery Time"
IEEE MTT-S Int. Microwave Symp. Dig., pp. 781-784 (2009).

B. Sumpf, H. Schmidt, M. Maiwald, A. Müller, G. Erbert, H.-D. Kronfeldt, G. Tränkle
"Microsystem technology based diode lasers and Raman sensors for in situ food quality control"
Proc. SPIE, vol. 7315, no. 731508 (2009).

P. Adamiec, B. Sumpf, I. Rüdiger, J. Fricke, K.-H. Hasler, P. Ressel, H. Wenzel, M. Zorn, G. Erbert, and G. Tränkle
"Tapered lasers emitting at 650 nm with 1 W output power with nearly diffraction-limited beam quality"
Opt. Lett., vol. 34, no. 16, pp. 2456-2458 (2009).

E. Bahat-Treidel, R. Lossy, J. Würfl, and G. Tränkle
"AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode"
IEEE Electron Device Lett., vol. 30, no. 9, pp. 901-903 (2009).

E. Bahat-Treidel, O. Hilt, F. Brunner, J. Würfl, and G. Tränkle
"Punch-through voltage enhancement scaling of AlGaN/GaN HEMTs using AlGaN double heterojunction confinement"
phys. stat. sol. (c), vol. 6, no. 6, pp. 1373-1377 (2009).

E. Bahat-Treidel, O. Hilt, F. Brunner, J. Würfl, and G. Tränkle
"Engineered linearity of GaN-based HEMTs power devices by tailoring transfer characteristics"
phys. stat. sol. (c), vol. 6, no. 6, pp. 1378-1381 (2009).

T. Krämer, M. Rudolph, F.J. Schmückle, J. Würfl, and G. Tränkle
"InP DHBT Process in Transferred-Substrate Technology With f_t and f_max Over 400 GHz"
IEEE Trans. Electron Devices , vol. 56, no. 9, pp. 1897-1903 (2009).

T. Krämer, C. Meliani, F.J. Schmückle, J. Würfl, and G. Tränkle
"Traveling-Wave Amplifiers in Transferred Substrate InP-HBT Technology"
IEEE Trans. Microwave Theory Tech., vol. 57, no. 9, pp. 2114-2121 (2009).

P. Crump, H. Wenzel, G. Erbert, and G. Tränkle
"Advances in spatial and spectral brightness in 800-1100 nm GaAs-based high power broad area lasers"
Proc. SPIE, vol. 7483, no. 74830B (2009).

A. Glowacki, P. Laskowski, C. Boit, P. Ivo, E. Bahat-Treidel, R. Pazirandeh, R. Lossy, J. Würfl, G. Tränkle
"Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures"
Microelectron. Reliab., vol. 49, no. 9-11, pp. 1211-1215 (2009).

K. Häusler, U. Zeimer, B. Sumpf, F. Bugge, P. Ressel, G. Erbert, and G. Tränkle
"Reliability of diode lasers for space applications"
Proc. SPIE, vol. 7198, no. 719816 (2009).

M. Maiwald, H. Schmidt, B. Sumpf, R. Güther, G. Erbert, H.-D. Kronfeldt, G. Tränkle
"Microsystem Light Source at 488 nm for Shifted Excitation Resonance Raman Difference Spectroscopy"
Appl. Spectrosc., vol. 63, no. 11, pp. 1283-1287 (2009).

S. Riecke, S. Schwertfeger, H. Wenzel, G. Tränkle
"Temperature Dependence of Picosecond Pulse Performance of a DFB Laser"
Proc. iNOW 2009 Stockholm/Berlin (2009).

X. Wang, P. Crump, A. Pietrzak, C. Schultz, A. Klehr, T. Hoffmann, A. Liero, A. Ginolas, S. Einfeldt, F. Bugge, G. Erbert and G. Tränkle
"Assessment of the Limits to Peak Power of 1100nm Broad Area Single Emitter Diode Lasers under Short Pulse Conditions"
Proc. iNOW 2009 Stockholm/Berlin (2009).

K. Paschke, G. Blume, C. Fiebig, A. Sahm, D. Feise, M. Uebernickel, G. Erbert, G. Tränkle
"Compact Watt-class visible light sources using direct frequency-doubled edge-emitting diode lasers"
Proc. SPIE, vol. 7193, no. 71931C (2009).

S. Hagedorn, E. Richter, C. Netzel, U. Zeimer, M. Weyers, and G. Tränkle
"HVPE growth of Al_xGa_1-xN alloy layers"
phys. stat. sol. (c), vol. 6, no. S2, pp. S309-S312 (2009).

P. Ivo, A. Glowacki, R. Pazirandeh, E. Bahat-Treidel, R. Lossy, J. Würfl, C. Boit, G. Tränkle
"Influence of GaN cap on robustness of AlGaN/GaN HEMTs"
Proc. Int. Reliability Physics Symposium 2009 (IEEE), pp. 71-75 (2009).

Ch. Hennig, E. Richter, M. Weyers and G. Tränkle
"Freestanding 2-in GaN layers using lateral overgrowth with HVPE"
J. Cryst. Growth, vol. 310, no. 5, pp. 911-915 (2008).

P. Crump, P. Leisher, T. Matson, V. Anderson, D. Schulte, J. Bell, J. Farmer, M. DeVito, R. Martinsen, Y.K. Kim, K.D. Choquette, G. Erbert, and G. Tränkle
"Control of optical mode distribution through etched microstructures for improved broad area laser performance"
Appl. Phys. Lett., vol. 92, no. 131113 (2008).

A. Knauer, H. Wenzel, T. Kolbe, S. Einfeldt, M. Weyers, M. Kneissl, G. Tränkle
"Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes"
Appl. Phys. Lett., vol. 92, no. 191912 (2008).

A. Pietrzak, P. Crump, R. Staske, H. Wenzel, G. Erbert and G. Tränkle
"Peak power from 60-µm Broad Area Single Emitter Limited to 50-W by Carrier Escape"
Conf. Dig. CLEO/QELS 2008, Paper CMN2 (2008).

P. Crump, H. Wenzel, G. Erbert, S. Einfeldt, P. Ressel, M. Zorn, F. Bugge, M. Spreemann, F. Dittmar, R. Staske, and G. Tränkle
"808-nm TM Polarised High Power Broad Area Lasers with 69.5% Power Conversion Efficiency at 71-W"
Conf. Dig. CLEO/QELS 2008, Paper CMN3 (2008).

T. Krämer, C. Meliani, F. Lenk, J. Würfl, G. Tränkle
"Transferred Substrate DHBT of f_t = 410 GHz and f_max = 480 GHz for Traveling Wave Amplifiers"
Conf. Dig. IPRM08 (2008).

O. Krüger, T. Wernicke, J. Würfl, R. Hergenröder, G. Tränkle
"Analysis of material modifications caused by nanosecond pulsed UV laser processing of SiC and GaN"
Appl. Phys. A, vol. 93, no. 1, pp. 85-91 (2008).

G. Sonia, E. Richter, F. Brunner, A. Denker, R. Lossy, M. Mai, F. Lenk, J. Bundesmann, G. Pensl, J. Schmidt, U. Zeimer, L. Wang, K. Baskar, M. Weyers, J. Würfl, G. Tränkle
"2 MeV ion irradiation effects on AlGaN/GaN HFET devices"
Solid-State Electron., vol. 52, no. 7, pp. 1011-1017 (2008).

T. Schlauch, M. Li, M.R. Hofmann, A. Klehr, G. Erbert, and G. Tränkle
"High peak power femtosecond pulses from modelocked semiconductor laser in external cavity"
Electron. Lett., vol. 44, no. 11, pp. 678-679 (2008).

C. Meliani, J. Flucke, A. Wentzel, J. Würfl, W. Heinrich, and G. Tränkle
"Switch-Mode Amplifier ICs with over 90% Efficiency for Class-S PAs using GaAs-HBTs and GaN-HEMTs"
IEEE MTT-S Int. Microwave Symp. Dig. 2008, pp. 751-754 (2008).

B. Sumpf, P. Adamiec, M. Zorn, P. Froese, J. Fricke, P. Ressel, H. Wenzel, M. Weyers, G. Erbert, G. Tränkle
"650 nm tapered lasers with 1 W maximum output power and nearly diffraction limited beam quality at 500 mW"
Proc. SPIE, vol. 6876, no. 68760M (2008).

B. Sumpf, M. Zorn, J. Fricke, P. Ressel, H. Wenzel, G. Erbert, M. Weyers, G. Tränkle
"1 W reliable operation of broad area lasers and 8 W reliable operation of 5 mm wide laser bars at 650 nm"
Proc. SPIE, vol. 6876, no. 68760T (2008).

T. Schmitt, A. Able, R. Häring, B. Sumpf, G. Erbert, G. Tränkle, F. Lison, W.G. Kaenders
"cw, 325nm, 100mW semiconductor laser system as potential substitute for HeCd gas lasers"
Proc. SPIE, vol. 6876, no. 687610 (2008).

G. Erbert, F. Bugge, B. Eppich, J. Fricke, K-H. Hasler, K. Paschke, A. Pietrzak, H. Wenzel, and G. Tränkle
"High brightness diode lasers with very narrow vertical divergence"
Proc. SPIE, vol. 6909, no. 69090P (2008).

A. Klehr, H. Wenzel, O. Brox, F. Bugge, G. Erbert, T-P. Nguyen and G. Tränkle
"High power DFB lasers for D1 and D2 caesium absorption spectroscopy and atomic clocks"
Proc. SPIE, vol. 6909, no. 69091E (2008).

O. Brox, J. Wiedmann, F. Scholz, F. Bugge, J. Fricke, A. Klehr, T. Laurent, P. Ressel, H. Wenzel, G. Erbert and G. Tränkle
"Integrated 1060nm MOPA pump source for high-power green light emitters in display technology"
Proc. SPIE, vol. 6909, no. 69091G (2008).

P. Crump, H. Wenzel, G. Erbert, P. Ressel, M. Zorn, F. Bugge, S. Einfeldt, R. Staske, U. Zeimer, A. Pietrzak, G. Tränkle
"Passively Cooled TM Polarized 808-nm Laser Bars With 70% Power Conversion at 80-W and 55-W Peak Power per 100-µm Stripe Width"
IEEE Photonics Technol. Lett., vol. 20, no. 16, pp. 1378-1380, (2008).

M. Maiwald, A. Ginolas, A. Müller, A. Sahm, B. Sumpf, G. Erbert, and G. Tränkle
"Wavelength-Stabilized Compact Diode Laser System on a Microoptical Bench With 1.5-W Optical Output Power at 671 nm"
IEEE Photonics Technol. Lett., vol. 20, no. 19, pp. 1627-1629 (2008).

K.-H. Hasler, B. Sumpf, P. Adamiec, F. Bugge, J. Fricke, P. Ressel, H. Wenzel, G. Erbert, G. Tränkle
"5-W DBR Tapered Lasers Emitting at 1060 nm With a Narrow Spectral Linewidth and a Nearly Diffraction-Limited Beam Quality"
IEEE Photonics Technol. Lett., vol. 20, no. 19, pp. 1648-1650 (2008).

B. Sumpf, M. Zorn, M. Maiwald, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, and G. Tränkle
"5.6-W Broad-Area Lasers With a Vertical Far-Field Angle of 31° Emitting at 670 nm"
IEEE Photonics Technol. Lett., vol. 20, no. 8, pp. 575-577 (2008).

A. Pietrzak, H. Wenzel, G. Erbert, and G. Tränkle
"High-power laser diodes emitting light above 1100 nm with a small vertical divergence angle of 13°"
Opt. Lett., vol. 33, no. 19, pp. 2188-2190 (2008).

V. Hoffmann, A. Knauer, F. Brunner, C. Netzel, U. Zeimer, S. Einfeldt, M. Weyers, G. Tränkle, J.M. Karaliunas, K. Kazlauskas, S. Jursenas, U. Jahn, J.R. van Look and M. Kneissl
"Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes"
J. Cryst. Growth, vol. 310, no. 21, pp. 4525-4530 (2008).

T.Q. Tran, M. Maiwald, B. Sumpf, G. Erbert, and G. Tränkle
"Microexternal cavity tapered lasers at 670 nm with 5 W peak power and nearly diffraction-limited beam quality"
Opt. Lett., vol. 33, no. 22, pp. 2692-2694 (2008).

C. Brenner, S. Hoffmann, C.-S. Friedrich, T. Schlauch, A. Klehr, G. Erbert, G. Tränkle, C. Jördens, M. Salhi, M. Koch, and M.R. Hofmann
"Semiconductor laser based THz generation and detection"
phys. stat. sol. (c), vol. 6, no. 2, pp. 564-567 (2008).

O. Reentilä, F. Brunner, A. Knauer, A. Mogilatenko, W. Neumann, H. Protzmann, M. Heuken, M. Kneissl, M. Weyers, G. Tränkle
"Effect of the AIN nucleation layer growth on AlN material quality"
J. Cryst. Growth, vol. 310, no. 23, pp. 4932-4934 (2008).

T. Kettler, K. Posilovic, J. Fricke, P. Ressel, A. Ginolas, U.W. Pohl, V.A. Shchukin, N.N. Ledentsov, D. Bimberg, J. Jönsson, M. Weyers, G. Erbert, and G. Tränkle
"High brightness and ultra-narrow beam 850 nm GaAs/AlGaAs photonic band crystal lasers and first uncoupled PBC single-mode arrays"
Proceedings ISLC 2008, pp. 194-195 (2008).

K. Posilovic, T. Kettler, V.A. Shchukin, N.N. Ledentsov, U.W. Pohl, D. Bimberg, J. Fricke, A. Ginolas, G. Erbert, G. Tränkle, J. Jönsson, M. Weyers
"Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes"
Appl. Phys. Lett., vol. 93, no. 221102 (2008).

S. Gnanapragasam, E. Richter, F. Brunner, A. Denker, R. Lossy, M. Mai, F. Lenk, J. Opitz-Coutureau, G. Pensl, J. Schmidt, U. Zeimer, L. Wang, B. Krishnan, M. Weyers, J. Würfl and G. Tränkle
"Irradiation effects on AlGaN HFET devices and GaN layers"
J. Mater. Sci. - Mater. Electron., vol. 19, no. 1, pp. 64-67 (2008).

M. Herms, U. Zeimer, G. Sonia, F. Brunner, E. Richter, M. Weyers, G. Tränkle, T. Behm, G. Irmer, G. Pensl, A. Denker, J. Opitz-Coutureau
"Study of in-depth strain variation in ion-irradiated GaN"
J. Mater. Sci. - Mater. Electron., vol. 19, no. 1, pp. 68-72 (2008).

K. Häusler, U. Zeimer, B. Sumpf, G. Erbert, G. Tränkle
"Degradation model analysis of laser diodes"
J. Mater. Sci. - Mater. Electron., vol. 19, no. 1, pp. 160-164 (2008).

E. Bahat-Treidel, O. Hilt, F. Brunner, J. Würfl, and G. Tränkle
"Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement"
IEEE Trans. Electron Devices, vol. 55, no. 12, pp. 3354-3359 (2008).

B. Sumpf, M. Zorn, R. Staske, J. Fricke, A. Ginolas, K. Häusler, W. Pittroff, P. Ressel, G. Erbert, M. Weyers, G. Tränkle
"650 nm InGaP broad area lasers with 5000 h reliable operation at 600 mW"
IEEE Photonics Technology Letters, vol. 19, 118-120, 2007.

F. Dittmar, B. Sumpf, G. Erbert and G. Tränkle
"Long-term reliability studies of high-power 808 nm tapered diode lasers with stable beam quality"
Semicond. Sci. Technol. 22 (2007) 374-379.

M. Rudolph, R. Behtash, R. Doerner, K. Hirche, J. Würfl, W. Heinrich, G. Tränkle
"Analysis and Optimization of Highly Survivable GaN Low-Noise Amplifiers"
IEEE Trans. Microwave Theory Tech., vol.55, 37 - 43 Jan. 2007.

B. Sumpf, G. Erbert, J. Fricke, P. Froese, R. Häring, W.G. Kaenders, A. Klehr, F. Lison, P. Ressel, H. Wenzel, M. Weyers, M. Zorn, G. Tränkle
"670 nm tapered lasers and amplifiers with output powers P > 1 W and nearly diffraction limited beam quality"
Proc. of SPIE Vol. 6485 (2007) 648517.

Ch. Hennig, E. Richter, M. Weyers, and G. Tränkle
"Self-separation of thick two inch GaN layers grown by HVPE on sapphire using epitaxial lateral overgrowth with masks containing tungsten"
phys. stat. sol. (c) 4, No. 7, 2638-2641 (2007).

E. Richter, Ch. Hennig, L. Wang, U. Zeimer, M. Weyers, and G. Tränkle
"Optimization of HVPE growth of freestanding c-plane GaN layers using (100) γ-LiAlO₂ substrates"
phys. stat. sol. (c) 4, No. 7, 2277-2280 (2007).

R. Häring, B. Sumpf, G. Erbert, G. Tränkle, F. Lison, W.G. Kaenders
"670 nm semiconductor lasers for Lithium spectroscopy with 1 W"
Proc. SPIE 6485, 648516 (2007).

C. Fiebig, G. Erbert, W. Pittroff, H. Wenzel, A. Maaßdorf, S. Einfeldt, and G. Tränkle
"High-power, high-brightness 100W QCW diode laser at 940nm"
Proc. SPIE 6456, 64560K (2007).

B. Sumpf, M. Zorn, M. Maiwald, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, G. Tränkle
"5.5 W output power from 100 µm stripe width lasers at 670 nm with a vertical far-field angle of 32 degrees"
Conference Digest CLEO/Europe 2007, Paper CB14-4.

T.-P. Nguyen, A. Klehr, O. Brox, G. Erbert, and G. Tränkle
"200 kHz linewidth of 780 nm high-power distributed feedback diode laser"
Conference Digest CLEO/Europe 2007, Paper CB-6-WED.

S. Schwertfeger, A. Klehr, J. Fricke, G. Erbert, and G. Tränkle
"High power pulse generation from a 10mm long monolithic multi section mode locked semiconductor laser at 920nm"
Conference Digest CLEO/Europe 2007, Paper CB-7-WED.

O. Krüger, G. Schöne, T. Wernicke, W. John, J. Würfl, and G. Tränkle
"UV laser drilling of SiC for semiconductor device fabrication"
Journal of Physics: Conference Series 59 (2007) 740-744.

T. Wernicke, O. Krüger, M. Herms, J. Würfl, H. Kirmse, W. Neumann, T. Behm, G. Irmer, G. Tränkle
"Analysis of materials modifications caused by UV laser micro drilling of via holes in AlGaN/GaN transistors on SiC"
Applied Surface Science 253 (2007) 8008-8014.

A. Klehr, H. Wenzel, O. Brox, F. Bugge, G. Erbert, T-P. Nguyen, and G. Tränkle
"High-power 894 nm monolithic distributed-feedback laser"
Optics Express, vol. 15, no. 18, pp. 11364-11369, 2007.

F. Bugge, U. Zeimer, H. Wenzel, R. Staske, B. Sumpf, G. Erbert, M. Weyers and G. Tränkle
"Laser Diodes with highly strained InGaAs MQWs and very narrow far fields"
phys. stat. sol. (c)3, 3 (2006) 423-426.

A. Klehr, F. Bugge, G. Erbert, J. Fricke, A. Knauer, P. Ressel, H. Wenzel, G. Tränkle
"High power broad area 808 nm DFB lasers for pumping solid state lasers"
Proceedings SPIE, vol. 6133, "Novel In-Plane Semiconductor Lasers V", 96-105 (2006).

M. Maiwald, S. Schwertfeger, R. Güther, B. Sumpf, K. Paschke, C. Dzionk, G. Erbert, and G. Tränkle
"600 mW optical output power at 488 nm by use of a high-power hybrid laser diode system and a periodically poled MgO:LiNbO₃ bulk crystal"
Optics Letters, Vol. 31, No. 6, March 15, pp. 802-804, 200.

F. Dittmar, B. Sumpf, J. Fricke, G. Erbert, and G. Tränkle
"High-power 808-nm tapered diode lasers with nearly diffraction-limited beam quality of M² = 1.9 at P = 4.4 W"
IEEE Phot. Techn. Lett. 18, pp. 601-603 (2006).

S. Schwertfeger, J. Wiedmann, B. Sumpf, A. Klehr, F. Dittmar, A. Knauer, G. Erbert and G. Tränkle
"7.4 W continuous-wave output power of master oscillator power amplifier system at 1083 nm"
Electronics Letters, Vol. 42, No. 6, 346-347 (2006).

B. Sumpf, M. Zorn, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, G. Tränkle
"High-efficient 650 nm laser bars with an output power of about 10 W and a wall-plug efficiency of 30%"
Proceedings SPIE, vol. 6133, "Novel In-Plane Semiconductor Lasers V", 78-85 (2006).

M. Rudolph, R. Behtash, K. Hirche, J. Würfl, W. Heinrich, G. Tränkle
"A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier"
IEEE MTT-S Int. Microwave Symp. Dig., 2006, 1899 - 1902.

Prof. Dr. Günther Tränkle

Phone

+49.30.6392-2601

Fax

+49.30.6392-2602

Email

guenther.traenkle@fbh-berlin.de