Cryolaser: innovative cryogenic diode laser bars optimized for emerging ultra-high power laser applications

P. Crump , C. Frevert, H. Wenzel, F. Bugge, S. Knigge, G. Erbert and G. Tränkle

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany

Published in:
Conference on Lasers and Electro Optics (CLEO), San Jose, USA, Jun. 9-14, p. JW1J.2 (2013).
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Abstract:
"Cryolaser" diode laser designs exploit the improvement in semiconductor material properties at sub-zero temperatures to increase efficiency and power. Optimized single 9xx-nm laser bars demonstrate record peak pulse energy of 2 J (1.7 kW, 1.2 ms, -50°C).

OCIS codes:
(140.5960) Semiconductor lasers; (140.2010) Diode laser arrays

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