Accurate modelling of InGaN quantum wells

Published in:
Optical and Quantum Electronics, vol. 38, pp. 953-961, 2006.
© Springer-Verlag 2006. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Springer-Verlag.

Abstract:
The internal field, the band structure and the oscillator strengths of the optical transitions of wurtzite strained InGaN quantum wells are accurately computed by a self-consistent solution of the Poisson equation and an eight-band k · p Schrödinger equation taking into account charges due to polarisation fields, doping and free carriers. The results are used to compare luminescence and gain spectra for single and triple quantum well structures and to elucidate the effect of the polarisation fields.

Keywords:
GaN, InGaN quantum wells, semiconductor lasers, piezoelectric polarisation

Full version in pdf-format.