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Spectral properties of a semiconductor α-DFB laser cavity
A.P. Bogatov1, A.E. Drakin1, D.V. Batrak1, R. Güther2, K. Paschke2, H. Wenzel2
1 P.N. Lebedev Physics Institute, Russian Academy of Sciences, Leninsky prosp. 53, 119991 Moscow, Russia
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Published in:
Quantum Electronics 36 (8) 745-750 (2006).
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Abstract:
The experimental and theoretical investigations of
spectral properties of a semiconductor α-DFB laser cavity are
carried out. It is shown that in these lasers the curvature of
mode gain spectra near the maximum is higher by more than
two orders of magnitude than in conventional semiconductor
lasers with a Fabry-Perot cavity. The distance between the
adjacent axial modes of an α-DFB laser is shorter than in the
case of a Fabry-Perot cavity laser of the same length, and its
experimental value agrees well with the value obtained in the
simple geometrical model, taking into account a zigzag
propagation of radiation inside the cavity.
Index Terms:
heterolaser, α-DFB laser, cavity, spectral selectivity,
Fox-Lee approach.
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