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9 W output power from a 808 nm tapered diode laser in pulsed mode operation with nearly diffraction-limited beam quality
F. Dittmar, A. Klehr, B. Sumpf, A. Knauer, J. Fricke, G. Erbert, G. Tränkle
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Published in:
2006 IEEE 20th International Semiconductor Laser Conference, September 2006, Hawaii, USA, TuC2, IEEE Catalog Number: 06CH37738C, ISBN 0-7803-9560-3, Library of Congress: 2005934158.
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Abstract:
808 nm tapered diode lasers are fabricated based on
a SLOC structure with very small divergence of 18°. 14 W
overall output power with 9 W of nearly diffraction-limited
beam quality are presented.
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