 |
Accurate modeling of InGaN quantum wells
H. Wenzel
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Published in:
Proceedings 6th International Conference on Numerical Simulation of Optoelectronic Devices, IEEE, p. 7-8 (2006).
© 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for
advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists,
or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Full version in pdf-format.
|
|