N-type doping of HVPE-grown GaN using dichlorosilane

E. Richter, Ch. Hennig, U. Zeimer, L. Wang, M. Weyers, and G. Tränkle

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Published in:
phys. stat. sol. (a)203, 7 (2006) 1658-1662.
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Abstract:
N-type doping of GaN in hydride vapour phase epitaxy (HVPE) has been studied. While silane was found to be not suitable, doping from solid silicon was found to be feasible but difficult to handle. Dichlorosilane was found to be a convenient Si doping source for HVPE growth of GaN. High electron mobilities as well as good optical and structural properties are obtained in the doping range of 6 × 10¹⁷ cm^-3 to 8 × 10¹⁸ cm^-3 using dichlorosilane.

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