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High and low energy proton irradiation effects on AlGaN/GaN HFETs
G. Sonia1, E. Richter1, R. Lossy1, M. Mai1, J. Schmidt1, M. Weyers1, G. Tränkle1, A. Denker2, J. Opitz-Coutureau2, G. Pensl3, I. Brauer4, and H.P. Strunk4
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Ionenstrahllabor, Hahn-Meitner-Institut, Glienicker Straße 100, 14109 Berlin, Germany
3 Institut für Angewandte Physik, Universität Erlangen-Nürnberg, Staudtstraße 7, 91058 Erlangen, Germany
4 Institut für Werkstoffwissenschaften VII, Universität Erlangen-Nürnberg, Cauerstraße 6, 91058 Erlangen, Germany
Published in:
phys. stat. sol. (c)3, 6 (2006) 2338-2341.
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Abstract:
AlGaN/GaN heterojunction field effect transistors (HFETs) have been irradiated with protons at 68 MeV
and 2 MeV with fluences up to 1013 cm-2 in order to simulate operation in space. Hall effect measurements,
dc characteristics and RF load pull measurements at 2 GHz do not reveal significant changes indicating
the suitability of the transistors for reliable operation in space.
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