 |
Freestanding two inch c-plane GaN layers grown on (100) γ-lithium aluminium oxide by hydride vapour phase epitaxy
E. Richter1, Ch. Hennig1, U. Zeimer1, M. Weyers1, G. Tränkle1, P. Reiche2, S. Ganschow2, R. Uecker2, and K. Peters3
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Institut für Kristallzüchtung, Max Born-Str. 2, 12489 Berlin, Germany
3 CrysTec GmbH, Köpenicker Str. 325, 12555 Berlin, Germany
Published in:
phys. stat. sol. (c)3, 6 (2006) 1439-1443.
© 2006 Wiley-VCH Verlag GmbH. Personal use of this material is permitted. However, permission to reprint/republish this material for
advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists,
or to reuse any copyrighted component of this work in other works must be obtained from the Wiley-VCH Verlag GmbH.
Abstract:
(100) γ-lithium aluminium oxide substrates of two inch diameter were fabricated from crystals grown by
the Czochralski technique. Onto these substrates c-plane GaN with a thickness of about 200 µm has been
grown by hydride vapour phase epitaxy in a horizontal AIX HVPE reactor. The GaN layer spontaneously
separates from the bottom lithium aluminium oxide substrate during the cool-down resulting in complete
freestanding 2 inch GaN wafers.
Full version in pdf-format.
|
|
