Feedback controlled growth of strain-balanced InGaAs multiple quantum wells in metal-organic vapour phase epitaxy using an in situ curvature sensor

Published in:
Semiconductor Science and Technology 21(9) (2006) p. L45-L48.
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Abstract:
The growth of InGaAs quantum wells (QWs) on GaAs was optimized in situ using a high-resolution curvature sensor in metal-organic vapour phase epitaxy. The very small change in substrate curvature due to the incorporated strain induced by the only 6 nm thin QWs was clearly resolved and can be confirmed by strain theory. Furthermore, the possibility of in situ adjustment of strain compensation using a GaAsP layer is evaluated. The growth of the GaAsP layer was stopped exactly after the in situ curvature measurement indicated a full strain compensation by reaching the initial curvature value before growth of the QWs was started. Ex situ x-ray diffraction measurements confirm the exact and full strain compensation.

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