On the Simulation of Low-Frequency Noise Upconversion in InGaP/GaAs HBTs

M. Rudolph¹, F. Lenk¹, O. Llopis², W. Heinrich¹

¹ Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
² Laboratoire d´Analyse et d´Architecture des Systèmes du Centre National de la Recherche Scientifique, 31 077 Toulouse, France

Published in:
IEEE Trans. Microwave Theory Tech., Vol. 54, no. 7, July 2006, pp. 2954-2961.
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Abstract:
Residual phase-noise measurements of GaAs heterojunction bipolar transistors (HBTs) with different low-frequency noise properties are used to investigate how accurate a compact HBT model can predict the upconversion of low-frequency noise under nonlinear operation. We find that the traditional low-frequency source implementation, as well as a cyclostationary noise source implementation, have shortcomings under different operation conditions. While, in general, the cyclostationary approach yields much better results, it fails under certain operation conditions. Experimental evidence is given that this is caused by overestimated correlation between baseband noise and RF noise sidebands. It is shown that a model based on cyclostationary sources with reduced cross-correlation yields good agreement between measurement and simulation in all cases.

Terms:
Amplifier noise, burst noise, equivalent circuit, heterojunction bipolar transistor (HBT), noise, oscillator noise, phase noise, semiconductor device modeling, semiconductor device noise, shot noise.

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