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A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier
M. Rudolph1, R. Behtash1, K. Hirche2, J. Würfl1, W. Heinrich1, G. Tränkle1
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Tesat-Spacecom GmbH & Co. KG, Gerberstr. 49, D-71522 Backnang, Germany
Published in:
IEEE MTT-S Int. Microwave Symp. Dig., 2006, 1899 - 1902.
© 2006 The IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for
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Abstract:
A highly rugged low-noise GaN MMIC amplifier is presented
that operates in the frequency band 3-7 GHz. A noise figure NF
below 2.3 dB is measured from 3.5 to 7 GHz, with NF < 1:8 dB between
5 and 7 GHz. The survivability of the LNA was assessed by several
stress-tests, injecting in the input up to 36 dBm at 4 GHz for 16 hours.
To the authors knowledge, these are the most severe survivability tests
for these circuits reported in the literature so far.
Keywords:
Amplifier noise, Integrated circuit noise, Microwave
FET amplifiers, MMIC amplifiers, Noise, Semiconductor device noise
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