High-power 808-nm tapered diode lasers with nearly diffraction-limited beam quality of M2 = 1.9 at P = 4.4 W

F. Dittmar, B. Sumpf, J. Fricke, G. Erbert, and G. Tränkle

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Published in:
IEEE Phot. Techn. Lett. 18, pp. 601-603 (2006).
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Abstract:
High-power 808-nm tapered diode lasers mounted as single emitters with very good brightness were manufactured and analyzed. The beam propagation ratio M2 is 1.9 at 4.4 W; a very low beam propagation ratio M2 of 1.3 is achieved at 3.9 W. At 808 nm, the high brightness of 460 MW · cm-2 sr-1 never reported before is a step forward toward new applications of tapered diode lasers.

Index Terms:
808 nm, beam quality, high brightness, high power, semiconductor lasers, tapered lasers.

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