Laser Diodes with highly strained InGaAs MQWs and very narrow far fields

F. Bugge, U. Zeimer, H. Wenzel, R. Staske, B. Sumpf, G. Erbert, M. Weyers and G. Tränkle

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Published in:
phys. stat. sol. (c)3, 3 (2006) 423-426.
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Abstract:
The effect of variation of the number of highly strained InGaAs quantum wells embedded in GaAs layers on the crystal quality of the epitaxial layers and AlGaAs/GaAs laser diodes was investigated. With four quantum wells and very thick waveguide layers, reasonable efficient laser diodes emitting above 1100 nm with a narrow vertical far field (FWHM = 15 °) were obtained. Broad area laser diodes with 200 µm stripe width and an optimised doping profile emit nearly 20 W cw output power.

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