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Tunable high-power narrow-linewidth semiconductor laser based on an external-cavity tapered amplifier
M. Chi, O.B. Jensen, J. Holm, Chr. Pedersen, P.E. Andersen
Optics and Plasma Research Department, Risų National Laboratory, DK-4000 Roskilde, Denmark
G. Erbert, B. Sumpf
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
P.M. Petersen
Optics and Plasma Research Department, Risų National Laboratory, DK-4000 Roskilde, Denmark
Published in:
Optics Express Vol. 13, No. 26; 10589-10596 (2005).
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Abstract:
A high-power narrow-linewidth laser system based on a tapered
semiconductor optical amplifier in external cavity is demonstrated. The
external cavity laser system uses a new tapered amplifier with a super-large
optical-cavity (SLOC) design that leads to improved performance of the
external cavity diode lasers. The laser system is tunable over a 29 nm range
centered at 802 nm. As high as 1.95 W output power is obtained at 803.84 nm,
and an output power above 1.5 W is achieved from 793 to 812 nm at
operating current of 3.0 A. The emission linewidth is below 0.004 nm and
the beam quality factor M2 is below 1.3 over the 29 nm tunable range. As an
example of application, the laser system is used as a pump source for the
generation of 405 nm blue light by single-pass frequency doubling in a
periodically poled KTiOPO4. An output power of 24 mW at 405 nm,
corresponding to a conversion efficiency of 0.83%/W is attained.
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