Nearly Diffraction Limited 980-nm Tapered Diode Lasers With an Output Power of 7.7 W

K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, R. Staske, H. Wenzel, and G. Tränkle

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany

Published in:
IEEE J. of Sel. Top. in Quant. Electron., vol.11, no.5, Sep/Oct 2005, 1223-1227.
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Abstract:
High-brightness tapered diode lasers emitting at 980 nm with electrically separated straight ridge waveguide and tapered gain-guided sections were fabricated. An output power of more than 14 W was achieved in quasi-continuous wave (QCW) operation. The value of the beam propagation ratio M² remained below 2 up to a power of 7.7 W if the sections were separately contacted. The vertical beam divergence was 18° (FWHM) only.

Index Terms:
Beam quality, high brightness, high-power laser, semiconductor laser, tapered laser.

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