 |
Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides
H. Hardtdegen1, N. Kaluza1, R. Steins1, Y.S. Cho1, Z. Sofer1, M. Zorn2, K. Haberland3, J.-T. Zettler3
1 Institute of Thin Films and Interfaces, Center of Nanoelectronics for Information Technology, Research Center Juelich, 52425 Juelich, Germany
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
3 LayTec Gesellschaft für in situ und Nanosensorik mbH, Helmholzstr. 13-14, 10587 Berlin, Germany
Published in:
physica status solidi (b) 242 (2005) p. 2581-2586.
© 2005 WILEY-VCH Verlag GmbH & Co. KGaA. Personal use of this material is permitted. However, permission to reprint/republish this material for
advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists,
or to reuse any copyrighted component of this work in other works must be obtained from the WILEY-VCH Verlag GmbH & Co. KGaA.
Abstract:
In this paper we will first report on the use of real-time determination of wafer temperature for transparent
substrates. With this method we will study the unintentional influence of growth parameter variations on
the surface temperature. The effect on nitride growth optimization will be discussed.
Full version in pdf-format.
|
|
